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首页> 外文会议>Physics and technology of high-k materials 9 >Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and Their Interfaces
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Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and Their Interfaces

机译：隧穿发射极双极晶体管作为介电体及其接口的表征工具

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摘要

The metal insulator semiconductor and metal insulator metal structures are of interest for transistor technology and resistive switching based memory. We propose the tunneling emitter bipolar transistor as a complementary characterization tool of both structures. Using this technique one can distinguish between electron and hole injection through the insulator and detect the presence of recombination centers at the dielectric-semiconductor interface. In addition, the base-collector p-n junction adjacent to the dielectric is a sensitive detector for material damage. We have examined two dielectric materials: Al_2O_3 and Si_3N_4 using a tunneling emitter bipolar transistor based upon the InP/GaInAs material system. The main conclusion drawn from the experiments is that the dominant transport mechanism through the insulators is filamentary defect assisted transport. Thermal treatment of both materials significantly reduced the interface recombination velocity.
机译：对于晶体管技术和基于电阻切换的存储器，金属绝缘体半导体和金属绝缘体金属结构是令人关注的。我们提出隧道发射极双极晶体管作为两种结构的互补表征工具。使用这种技术，可以区分通过绝缘子注入的电子和空穴，并且可以检测介电体-半导体界面处复合中心的存在。另外，与电介质相邻的基极-集电极p-n结对材料损坏是灵敏的检测器。我们已经使用基于InP / GaInAs材料系统的隧穿发射极双极晶体管检查了两种介电材料：Al_2O_3和Si_3N_4。从实验得出的主要结论是，通过绝缘子的主要传输机制是丝状缺陷辅助传输。两种材料的热处理均显着降低了界面复合速度。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    E. Yalon; A. Gavrilov; S. Cohen; D. Mistele; V. Mikhelashvili; B. Meyler; J. Salzman; D. Ritter;

  • 作者单位

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

    Department of Electrical Engineering, Technion, Israel Institute of Technology 32000 Haifa, Israel;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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