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首页> 外文会议>Physics and technology of high-k materials 9 >Deposition Mechanism and Electrical Property of CeO_2Thin Films by MOCVD with H_2O Introduction
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Deposition Mechanism and Electrical Property of CeO_2Thin Films by MOCVD with H_2O Introduction

机译：H_2O MOCVD沉积CeO_2薄膜的机理和电学性能。

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摘要

Cerium dioxide (CeO_2 thin films are prepared by means of the metal organic chemical vapor deposition (MOCVD) using tetrakis (3-methyl-3-pentoxy) cerium with and without H_2O vapor introduction. A large amount of H_2O (more than 2 seem) acts as an oxidant and as a result the deposition rate increases by up to four times at the deposition pressure of 2.0 Pa, leading to the temperature independence of the deposition rate. At the low deposition temperature of 270 ℃, a small amount of H_2O (0.1-0.2 seem) suppresses the deposition because of its preferential occupation of the surface sites. The CeO_2 film annealed at 600 ℃ in the oxidizing ambient shows steep C-V characteristics with no flat band voltage shift nor hysteresis.
机译：二氧化铈（CeO_2薄膜是通过金属有机化学气相沉积（MOCVD），使用四（3-甲基-3-戊氧基）铈在有和没有引入H_2O的情况下制备的。大量的H_2O（大于2sccm）用作氧化剂，在2.0 Pa的沉积压力下，沉积速率最多增加四倍，从而导致沉积速率与温度无关。在270℃的低沉积温度下，少量的H_2O（ 0.1-0.2sccm）由于其优先占据表面位置而抑制了沉积；在氧化环境中于600℃退火的CeO_2薄膜具有陡峭的CV特性，没有平坦的带电压漂移和磁滞现象。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    N. Tada; T. Izu; T. Kitaru; H. Shimada; S. Suzuki; K. Ishibashi; Y. Yamamoto;

  • 作者单位

    Graduate school of Engineering, Hosei University, Tokyo 184-8584, Japan;

    Graduate school of Engineering, Hosei University, Tokyo 184-8584, Japan;

    Graduate school of Engineering, Hosei University, Tokyo 184-8584, Japan;

    Graduate school of Engineering, Hosei University, Tokyo 184-8584, Japan;

    COMET Inc, Ibaraki 305-0044, Japan;

    Canon ANELVA Corporation, Kanagawa 215-8550, Japan;

    Graduate school of Engineering, Hosei University, Tokyo 184-8584, Japan;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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