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首页> 外文会议>Physics and technology of high-k materials 9 >Epitaxial HfO_2 Thin Film on Si Substrates: A Strategy for Sub-1 nm EOT Technology
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Epitaxial HfO_2 Thin Film on Si Substrates: A Strategy for Sub-1 nm EOT Technology

机译：Si衬底上的外延HfO_2薄膜：亚1 nm EOT技术的策略

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摘要

Equivalent oxide thickness (EOT) of gate dielectric films was scaled to sub-1 nm by epitaxial growth of HfO_2 films on Si substrates. The process consists of two parts; deposition of amorphous HfO_2 films on Si substrates and crystallization in a solid-phase epitaxy manner. Conventional productions tools of atomic-layer deposition and rapid thermal anneal were applied to construct this technique. Epitaxial growth of HfO_2 films was confirmed on both Si (100) and Si (111) substrates. Metal-oxidesemiconductor capacitors and field-effect transistors were fabricated, and electrical properties were measured. The thinnest EOT accomplished by this technique was 0.5 nm, and the gate leakage current was about 6 times smaller than the SiO_2 case at the same EOT. Potential of crystalline high-k films in future gate stack technology is discussed on the basis of their crystal growth behaviors.
机译：通过在Si衬底上外延生长HfO_2膜，将栅介质膜的等效氧化物厚度（EOT）缩小至1 nm以下。该过程包括两个部分： Si衬底上沉积无定形HfO_2膜并以固相外延方式结晶。使用原子层沉积和快速热退火的常规生产工具来构造该技术。在Si（100）和Si（111）衬底上均证实了HfO_2薄膜的外延生长。制造金属氧化物半导体电容器和场效应晶体管，并测量电性能。通过此技术实现的最薄EOT为0.5 nm，并且在相同EOT情况下，栅极泄漏电流约为SiO_2情况的6倍。根据晶体生长行为，讨论了未来高栅堆叠技术中晶体高k膜的潜力。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Shinji Migita; Hiroyuki Ota;

  • 作者单位

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, West 7, Tsukuba, Ibaraki 305-8569, Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, West 7, Tsukuba, Ibaraki 305-8569, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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