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Resistive Switching Characteristics of Core-Shell Nanoparticles of Metal-Oxide on Flexible Substrate

机译：柔性基板上金属氧化物核壳纳米粒子的电阻转换特性

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摘要

Resistive switching characteristics of FePt/γ-Fe_2O_3 core-shell nanoparticle (NP) assembly on flexible substrate of polyethersulfone (PES) as being sandwiched by top and bottom Al electrodes were investigated for the potential as a flexible resistive switching memory. The NPs assembly was formed by solution process of dip-coating. The initial bipolar switching was observed in the voltage range < ±3 V, and the subsequent voltage sweep to higher voltage led to the increase of resistance, which is not typically observed in γ-Fe_2O_3 NP or other metal-oxide layer structure. Though the fundamental principle of resistive change in core-shell NPs is not clear, it demonstrated the feasibility of flexible memory application through solution-based processes.
机译：研究了FePt /γ-Fe_2O_3核壳纳米颗粒（NPS）组件在聚醚砜（PES）柔性基板上的电阻开关特性，该组件被顶部和底部Al电极夹在中间，具有作为柔性电阻开关存储器的潜力。 NP组件通过浸涂的溶液工艺形成。在小于±3 V的电压范围内观察到了初始的双极开关，随后的电压扫描到更高的电压导致电阻增加，这在γ-Fe_2O_3NP或其他金属氧化物层结构中通常没有观察到。尽管尚不清楚核壳NP中电阻变化的基本原理，但它证明了通过基于解决方案的过程进行灵活存储器应用的可行性。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    J.-W. Yoo; Q. Hu; Y.-J. Baek; C. J. Kang; H. H. Lee; T.-S. Yoon;

  • 作者单位

    Department of Nano Science and Engineering, Myongji University, Yoingin, Gyeongi- do 449-728, Republic of Korea;

    Department of Materials Science and Engineering, Myongji University, Yoingin, Gyeongi-do 449-728, Republic of Korea;

    Department of Materials Science and Engineering, Myongji University, Yoingin, Gyeongi-do 449-728, Republic of Korea;

    Department of Nano Science and Engineering, Myongji University, Yoingin, Gyeongi- do 449-728, Republic of Korea;

    Department of Chemical Engineering, Myongji University, Yoingin, Gyeongi-do 449- 728, Republic of Korea;

    Department of Nano Science and Engineering, Myongji University, Yoingin, Gyeongi- do 449-728, Republic of Korea,Department of Materials Science and Engineering, Myongji University, Yoingin, Gyeongi-do 449-728, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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