High Performance Cu-doped SiO_2 ReRAM by a Novel Chemical Soak Method

著录项

• 来源
  《Physics and technology of high-k materials 9》|2011年|p.469-473|共5页
• 会议地点 Boston MA(US);Boston MA(US)
• 作者

  Fun-Tat Chin; Wen-Luh Yang; Tien-Sheng Chao; Yuan-Ming Chang; Li-Min Lin; Sheng-Hsien Liu; Chia-Hsiung Lin;

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• 作者单位

  Department of Electronic Engineering Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.,Program in Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.;

  Department of Electronic Engineering Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.;

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan R.O.C.;

  Department of Electronic Engineering Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.,Program in Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.;

  Department of Electronic Engineering Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.,Program in Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.;

  Department of Electronic Engineering Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.,Program in Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.;

  Department of Electronic Engineering Communications Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 半导体技术;
• 关键词