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首页> 外文会议>Physics and technology of high-k materials 9 >High Speed Switching Characteristics of Pt/Ta_2O_5/Cu Memristive Switch
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High Speed Switching Characteristics of Pt/Ta_2O_5/Cu Memristive Switch

机译：Pt / Ta_2O_5 / Cu忆阻开关的高速开关特性

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摘要

Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of capturing the Set/Reset characteristics of memristive switches with high accuracy. This technique can accurately measure the transient current during the Set/Reset operation with rise times as short as 2 ns. The circuit is designed to cycle through (Set/Reset) and sense (read the state) rapidly in order to enable the study of endurance. The sense circuit is capable to measure currents as low as 30pA yielding accurate measurements of the resistance in the off state up to 1.6GΩ. Solid electrolyte Pt/Ta_2O_5/Cu memristive switches are examined that exhibit ON and OFF state resistance (R_(on) and R_(off)) ratios of >10~4 and endurance cycles of >6×10~4.
机译：准确测量开关式忆阻开关的瞬态细节对于阐明开关机制至关重要。这样的高速测量常常受到伪像的困扰。在这里，我们描述一种测量技术，该技术能够以高精度捕获忆阻开关的置位/复位特性。该技术可以在设置/复位操作期间以短至2 ns的上升时间精确测量瞬态电流。该电路旨在循环（设置/重置）并快速感应（读取状态），以便进行耐力研究。该检测电路能够测量低至30pA的电流，从而可以精确测量截止状态下高达1.6GΩ的电阻。研究了固体电解质Pt / Ta_2O_5 / Cu忆阻开关，其导通和关断状态电阻比（R_（on）和R_（off））大于10〜4，耐久周期大于6×10〜4。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    P. Shrestha; A. Ochia; K.P. Cheung; J.P. Campbell; H. Baumgart; G. Harris;

  • 作者单位

    Semiconductor Electronics Division, NIST, Gaithersburg, MD 20899,Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529;

    Semiconductor Electronics Division, NIST, Gaithersburg, MD 20899,Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529;

    Semiconductor Electronics Division, NIST, Gaithersburg, MD 20899;

    Semiconductor Electronics Division, NIST, Gaithersburg, MD 20899;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529,The Applied Research Center at Thomas Jefferson National Accelerator Facility, Newport News, VA 23606;

    Department of Electrical Engineering, Howard University,Washington, DC, 20059;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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