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首页> 外文会议>Physics and technology of high-k materials 9 >Electrical Characteristics of GaN and Si Based Metal-Oxide-Semiconductor (MOS) Capacitors
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Electrical Characteristics of GaN and Si Based Metal-Oxide-Semiconductor (MOS) Capacitors

机译：GaN和Si基金属氧化物半导体（MOS）电容器的电气特性

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摘要

We report on the electrical properties of Al_2O_3 and TiO_2 dielectrics in three different MOS capacitors of Al_2O_3-Si, TiO_2-Si, and Al_2O_3-GaN. Hysteresis analysis of capacitance-voltage data and shifts in flat band voltages showed that the interface electrical quality of TiO_2/Si was superior compared to that of Al_2O_3/Si and Al_2O_3/GaN. The growth temperature during atomic layer deposition were varied and Al_2O_3 deposited at 300℃ on GaN and TiO_2 deposited at 200℃ on Si had better electrical properties. The dielectric constant of the unannealed TiO_2 was low and only the brookite crystalline phase of TiO_2 was detected by XRD. The variation in the capacitance on some MOS capacitors was related to nonuniformities of the TiO_2 oxide surface, as found from AFM images. The leakage current densities were low, as obtained from current-voltage measurement of Al_2O_3 and TiO_2 gate oxide.
机译：我们报告了Al_2O_3 / n-Si，TiO_2 / n-Si和Al_2O_3 / n-GaN这三种不同的MOS电容器中的Al_2O_3和TiO_2电介质的电性能。电容-电压数据的滞后分析和平带电压的变化表明，TiO_2 / Si的界面电学性能优于Al_2O_3 / Si和Al_2O_3 / GaN。原子层沉积过程中生长温度变化，在GaN上300℃沉积Al_2O_3和在Si上200℃沉积TiO_2具有较好的电性能。 XRD分析表明，未退火的TiO_2的介电常数较低，仅检测到TiO_2的板钛矿晶相。从AFM图像中可以发现，某些MOS电容器上电容的变化与TiO_2氧化物表面的不均匀性有关。由Al_2O_3和TiO_2栅氧化物的电流-电压测量获得的漏电流密度低。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Tashfin Hossain; Darning Wei; J.H. Edgar;

  • 作者单位

    Chemical Engineering Department, Kansas State University, Manhattan, Kansas, USA;

    Chemical Engineering Department, Kansas State University, Manhattan, Kansas, USA;

    Chemical Engineering Department, Kansas State University, Manhattan, Kansas, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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