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首页> 外文会议>Physics and technology of high-k materials 9 >Dielectric Breakdown In Ultra-thin Hf Based Gate Stacks: A Resistive Switching Phenomenon.
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Dielectric Breakdown In Ultra-thin Hf Based Gate Stacks: A Resistive Switching Phenomenon.

机译：超薄H型栅堆叠中的介电击穿：电阻切换现象。

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摘要

The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results show that after BD, the switch between two different conductive states in the dielectric is possible. We have demonstrated that the conduction in both states is local, which has been verified through CAFM measurements. Additionally, the injected charge to the first recovery (Q_R) has been proposed as a parameter to describe the BD reversibility phenomenon. The BD recovery partially restores not only the current through the gate, but also the MOSFET channel related characteristics. The electrical performance of MOSFETs after the dielectric recovery has been modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality, though somehow affected, can be restored after BD recovery.
机译：研究了具有超薄ha基高k电介质的MOSFET的栅极电介质击穿（BD）可逆性。详细分析了现象学，并强调了与电阻切换现象的相似性。结果表明，在BD之后，电介质中两个不同导电状态之间的切换是可能的。我们已经证明了两种状态下的传导都是局部的，这已经通过CAFM测量得到了验证。另外，已经提出向第一回收率（Q_R）注入的电荷作为描述BD可逆性现象的参数。 BD恢复不仅可以部分恢复流经栅极的电流，还可以恢复与MOSFET通道相关的特性。介电恢复后的MOSFET电气性能已建模并引入电路模拟器。对几个数字电路的仿真表明，尽管受到某种程度的影响，但它们的功能可以在BD恢复后恢复。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    R. Rodriguez; J. Martin-Martinez; A. Crespo-Yepes; M. Porti; M. Nafria; X. Aymerich;

  • 作者单位

    Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona (UAB) 08193, Bellaterra, Barcelona (Spain);

    Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona (UAB) 08193, Bellaterra, Barcelona (Spain);

    Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona (UAB) 08193, Bellaterra, Barcelona (Spain);

    Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona (UAB) 08193, Bellaterra, Barcelona (Spain);

    Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona (UAB) 08193, Bellaterra, Barcelona (Spain);

    Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona (UAB) 08193, Bellaterra, Barcelona (Spain);

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  • 正文语种 eng
  • 中图分类 半导体技术;
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