Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

著录项

• 来源
  《Solid-State Electronics》 |2012年第2012期|p.2-6|共5页
• 作者

  H.W. Hsu; H.S. Huang; H.W. Chen; C.P. Cheng; K.C. Lin; S.Y. Chen; M.C. Wang; C.H. Liu;

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• 作者单位

  Institute of Mechatronic Engineering, National Taipei University of Technology (NTUT). Taiwan. ROC;

  Institute of Mechatronic Engineering, National Taipei University of Technology (NTUT). Taiwan. ROC;

  Institute of Mechatronic Engineering, National Taipei University of Technology (NTUT). Taiwan. ROC;

  Dept. of Mechatronic Technology, National Taiwan Normal University (NTNU), Taiwan, ROC;

  Dept. of Electronic Engineering, Ming Chuan University (MCU), Taiwan, ROC;

  Institute of Mechatronic Engineering, National Taipei University of Technology (NTUT). Taiwan. ROC;

  Dept. of Electronic Engineering, Ming-Hsin University of Science and Technology (MUST), Taiwan, ROC;

  Dept. of Mechatronic Technology, National Taiwan Normal University (NTNU), Taiwan, ROC;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  HfLaO; HfZrLaO; time dependent dielectric breakdown; (TDDB); lifetime;

  机译：HfLaO;HfZrLaO;时间相关的介电击穿（TDDB）;一生;