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EOT Scaling and Flatband Voltage Shift with Al Addition into TiN

机译：在Al中添加TiN的EOT缩放和平带电压漂移

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摘要

We present both EOT scaling and flatband voltage (V_(fb)) shift for Hf-based high-k containing metal-oxide-semiconductor capacitors (MOSCAPs) due to Al addition into the TiN metal gate. The metal gate was deposited using chemical vapor deposition (CVD) and the Hf-based high-k films were deposited using CVD or atomic layer deposition (ALD) in 300mm deposition chambers. We found that the V_(fb) shift amount by Al addition into TiN depends on the high-k film (HfO_2 vs. HfSiON), as the shift for the HfO_2 containing stack was greater than that in the HfSiON containing stack. We also examined the effect of the thermal budget of the MOSCAP flow on the V_(fb) shift by Al addition into TiN. We observed that the V_(fb) shift direction by Al addition into TiN was dependant on the MOSCAP flow (gate-first vs. gate-last like) and this V_(fb), shift behavior can be explained by Al-based dipole and oxygen vacancy models.
机译：我们介绍了由于Al添加到TiN金属栅极中而导致的基于Hf的高k含金属氧化物半导体电容器（MOSCAP）的EOT缩放和平带电压（V_（fb））偏移。使用化学气相沉积（CVD）沉积金属栅极，并使用CVD或原子层沉积（ALD）在300mm沉积室中沉积Hf基高k膜。我们发现，由于向Al中添加Al导致的V_（fb）位移量取决于高k膜（HfO_2与HfSiON），因为含HfO_2的堆叠的位移大于含HfSiON的堆叠的位移。我们还通过将Al添加到TiN中来研究了MOSCAP流的热预算对V_（fb）偏移的影响。我们观察到，通过向TiN中添加Al而产生的V_（fb）位移方向取决于MOSCAP流量（栅极先相对于栅极后等），并且该V_（fb）的位移行为可以通过基于Al的偶极子和氧气空缺模型。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    G. Nakamura; T. Hasegawa; S. Consiglio; F. Amano; V. Luong; Y. Trickett; C. S. Wajda; R. D. Clark; G. J. Leusink; K. Maekawa;

  • 作者单位

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

    TEL Technology Center, America, 255 Fuller Rd, Albany, NY 12203, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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