In_(0.7)Ga_(0.3)As Tunneling Field-Effect-Transistors with LaAlO_3 and ZrO_2 High-k Dielectrics

著录项

• 来源
  《Physics and technology of high-k materials 9》|2011年|p.249-253|共5页
• 会议地点 Boston MA(US);Boston MA(US)
• 作者

  F. Xue; H. Zhao; Y. Chen; Y. Wang; F. Zhou; Jack C. Lee;

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• 作者单位

  Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758 USA;

  Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758 USA;

  Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758 USA;

  Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758 USA;

  Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758 USA;

  Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758 USA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 半导体技术;
• 关键词