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首页> 外文会议>Physics and technology of high-k materials 9 >SF_6 Plasma Treated High k Dielectrics Engineering on InP Metal-Oxide- Semiconductor Field-Effect-Transistors
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SF_6 Plasma Treated High k Dielectrics Engineering on InP Metal-Oxide- Semiconductor Field-Effect-Transistors

机译：InP金属氧化物半导体场效应晶体管上的SF_6等离子处理的高k介电工程

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摘要

The device performance of HfO_2-based InP MOSFETs with or without Al_2O_3 interfacial passivation layer and SF_6 plasma treatment is investigated. With both Al_2O_3 interfacial passivation layer (IPL) and SF_6 plasma treatment, the transconductance, mobility, and drain current are improved by 50%, 56%, 100% respectively compared with those of a single HfO_2 gate oxide layer without SF_6 plasma treatment. Also we have investigated SF_6 plasma treatment in two ways: 1) 4 minutes treatment from the middle of 5 run HfO_2 oxide, 2) 4 minutes treatment from the top of 5 nm HfO_2 oxide. Results show that treatment in the middle introduces more F into the high k layer and drive current can be further enhanced by over 20% compared with treatment at the top of gate oxide stack.
机译：研究了具有或不具有Al_2O_3界面钝化层和SF_6等离子体处理的HfO_2基InP MOSFET的器件性能。与不进行SF_6等离子体处理的单个HfO_2栅氧化层相比，通过Al_2O_3界面钝化层（IPL）和SF_6等离子体处理，其跨导，迁移率和漏极电流分别提高了50％，56％和100％。我们还以两种方式研究了SF_6等离子体处理：1）从5种运行HfO_2氧化物的中间开始4分钟的处理，2）从5 nm HfO_2氧化物的顶部开始4分钟的处理。结果表明，与栅氧化层顶部的处理相比，中间的处理将更多的F引入高k层，并且驱动电流可以进一步提高20％以上。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Yanzhen Wang; Han Zhao; Yen-Ting Chen; Fei Xue; Fei Zhou; Jack C. Lee;

  • 作者单位

    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 USA;

    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 USA;

    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 USA;

    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 USA;

    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 USA;

    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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