Active Trap Determination at the Interface of Ge and Ino.s3Gao.47As Substrates with Dielectric Layers

机译：具有介电层的Ge和Ino.s3Gao.47As界面的有源陷阱测定

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Due to the high carrier mobility, Ge and IH-V semiconductors are attractive as active channels for post-Si metal oxide semiconductor (MOS) devices. However, integration of gate dielectrics on highmobility substrates is frequently jeopardized by the electrical activity of traps nearby the interface. Active traps determination at the interface between the two semiconductors with gate dielectrics has been conducted with the aim to validate several electrical passivation methodologies. In particular, GeO_2 and LaGeO_x passivations of Ge are investigated by conjugating magnetic resonance spectroscopy and electrical response of the MOS capacitors. The case of In_(0.53)Ga_(0.47)As is addressed by tailoring the surface treatments and the growth parameters in the trimethyaluminum based atomic layer desposition of Al_2O_3 films. The electrical quality of the Al_2O_3/In_(0.53)Ga_(0.47)As interface is assessed by exploring the temperature dependent electrical response of the MOS capacitors and admittance spectroscopy of the active traps energetically distributed in the In_(0.53)Ga_(0.47)As bandgap.

机译：由于高的载流子迁移率，Ge和IH-V半导体作为后硅金属氧化物半导体（MOS）器件的有源沟道非常有吸引力。然而，高介电常数的衬底上的栅极电介质的集成经常受到界面附近陷阱的电活动的危害。在具有栅极电介质的两个半导体之间的界面处进行了有源陷阱测定，旨在验证几种电钝化方法。特别地，通过共轭磁共振光谱和MOS电容器的电响应来研究Ge的GeO_2和LaGeO_x钝化。 In_（0.53）Ga_（0.47）As的情况通过在Al_2O_3薄膜的基于三甲基铝的原子层沉积中定制表面处理和生长参数来解决。通过探索MOS电容器的温度相关电响应和能量分布在In_（0.53）Ga_（0.47）As中的有源陷阱的导纳光谱来评估Al_2O_3 / In_（0.53）Ga_（0.47）As界面的电气质量带隙。

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《Physics and technology of high-k materials 9》|2011年|p.203-221|共19页
会议地点 Boston MA(US);Boston MA(US)
作者
A. Molle; S. Baldovino; L. Lamagna; S. Spiga; A. Lamperti; M. Fanciulli; D. Tsoutsou; E. Golias; A. Dimoulas; G. Brammertz; C. Merckling; M. Caymax;
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Laboratorio MDM, IMM-CNR,via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy;

Laboratorio MDM, IMM-CNR,via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy,Dipartimento di Scienza dei Materiali,Universita degli Studi di Milano-Bicocca, Milano, Italy;

Laboratorio MDM, IMM-CNR,via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy;

Laboratorio MDM, IMM-CNR,via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy;

Laboratorio MDM, IMM-CNR,via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy;

Laboratorio MDM, IMM-CNR,via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy ,Dipartimento di Scienza dei Materiali,Universita degli Studi di Milano-Bicocca, Milano, Italy;

MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens, Greece;

MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens, Greece;

MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens, Greece;

IMEC, Kapeldreef 75, 3001 Leuven, Belgium;

IMEC, Kapeldreef 75, 3001 Leuven, Belgium;

IMEC, Kapeldreef 75, 3001 Leuven, Belgium;

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Active Trap Determination at the Interface of Ge and Ino.s3Gao.47As Substrates with Dielectric Layers

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