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Effect of Plasma Treatment on Stress Reduction Induced by Shallow Trench Isolation Filled with Spin-on-glass Dielectric

机译：等离子体处理对填充自旋玻璃介电层的浅沟槽隔离引起的应力降低的影响

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We used Raman spectroscopy to evaluate the stress induced by shallow trench isolation (STI) filled with spin-on-glass (SOG) dielectric material. We investigated the novel processes, such as the nitrogen into the liner oxide, and the plasma treatment before and/or after cure annealing to suppress the strain introduced by the STI with SOG. We clarified that a nitrogen incorporated liner oxide suppressed the stress in the active area caused by the SOG film shrinkage, and the plasma treatments were also effective at suppressing the stress induction in the active area.

机译：我们使用拉曼光谱来评估由充满自旋玻璃（SOG）电介质材料的浅沟槽隔离（STI）引起的应力。我们研究了新工艺，例如将氮注入衬里氧化物，以及在固化退火之前和/或之后进行等离子处理，以抑制STI引入SOG产生的应变。我们弄清楚了掺氮的衬里氧化物抑制了由SOG膜收缩引起的在活性区域中的应力，并且等离子体处理在抑制在活性区域中的应力诱导方面也是有效的。

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《Physics and technology of high-k materials 9》|2011年|p.177-182|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
H. Hashiguchi; K. Nagata; T. Sameshima; Y. Mizukami; A. Ogura; T. Kuroda; Y.Sato; S. Ishizuka; Y. Hirota;
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School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan, 1-1 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8301, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

Tokyo Electron Yamanashi, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

Tokyo Electron Yamanashi, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

Tokyo Electron Yamanashi, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

Tokyo Electron, Ltd., 650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

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正文语种 eng
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1. Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs [J] . Dongwoo Kim, Seonhaeng Lee, T.K. Oh, Microelectronic Engineering . 2011,第6期

机译：虚拟有源图案对n-MOSFET中由自旋玻璃填充的浅沟槽隔离引起的机械应力的影响
2. Chemical mechanical polishing defect reduction via a plasma etch in the 0.15 μm shallow trench isolation process [J] . C. M. Chiu, T. F. Yen, K.-F. Chiu Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第3期

机译：在0.15μm浅沟槽隔离工艺中通过等离子刻蚀减少化学机械抛光缺陷
3. Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern [J] . Chang-Chun Lee, Chuan-Hsi Liu, Rong Hao Deng, Thin Solid Films . 2014,第apra30期

机译：具有凹陷浅沟槽隔离图案的N型金属氧化物半导体场效应晶体管的过程诱导应力研究
4. Effect of Plasma Treatment on Stress Reduction Induced by Shallow Trench Isolation Filled with Spin-on-glass Dielectric [C] . H. Hashiguchi, K. Nagata, T. Sameshima, International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice . 2011

机译：等离子体处理对纺丝玻璃电介质填充浅沟槽隔离诱导应力减少的影响
5. Novel Studies in Silicon Dioxide, Tungsten and Shallow-Trench Isolation Chemical Mechanical Planarization Processes Relating to Pad Micro-Texture, Conditioning Disc Type and Age, Tribology, Fluid Dynamics and Kinetics [D] . ?Mariscal, Juan Cristobal 2020

机译：二氧化硅，钨和浅沟隔离化学机械平面化工艺与垫微纹理，调节圆盘型和年龄，摩擦学，流体动力学和动力学相关的新型研究
6. Alleviation of adverse effects of drought stress on wheat seed germination using atmospheric dielectric barrier discharge plasma treatment [O] . Qiao Guo, Ying Wang, Haoran Zhang, -1

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7. Fill for shallow trench isolation CMP [O] . Andrew B. Kahng, Puneet Sharma, Alexander Zelikovsky 2013

机译：填充浅沟槽隔离CMP

Effect of Plasma Treatment on Stress Reduction Induced by Shallow Trench Isolation Filled with Spin-on-glass Dielectric

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