Enhanced Electrical Properties of Carbon Doped Epitaxial Gd_2O_3 Thin Films on Si Substrates

著录项

• 来源
  《Physics and technology of high-k materials 9》|2011年|p.101-107|共7页
• 会议地点 Boston MA(US);Boston MA(US)
• 作者

  Apurba Laha; A. Bin; P. R. P. Babu; A. Fissel; H. J. Osten;

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• 作者单位

  Institute of Electronic Materials and Devices, Leibniz University, Schneiderberg 32, D- 30167 Hannover, Germany;

  Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China;

  Institute of Electronic Materials and Devices, Leibniz University, Schneiderberg 32, D- 30167 Hannover, Germany,School of Electronics Engineering Vellore Institute of Technology (VIT) Vellore, Tamil Nadu, India;

  Information Technology Laboratory, Leibniz University, Schneiderberg 32, D-30167 Hannover, Germany;

  Institute of Electronic Materials and Devices, Leibniz University, Schneiderberg 32, D- 30167 Hannover, Germany;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 半导体技术;
• 关键词