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Theoretical and Experimental Demonstration of Electronic State of GeO_2

机译:GeO_2电子态的理论和实验演示

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摘要

The transition levels of oxygen vacancy (Vo) in GeO_2 with different charge state are calculated by first principle method. The formation energy of GeO_2 indicates there is a (+2/0) fix charge state in bulk GeO_2. The (+1/0) transition level near Ge valence band maximum which shows positive charge trap of GeO_2. We demonstrate a Ge MOS capacitor with thermal oxidation. The hysteresis of CV shows a negative V_(fb), shift which corresponds to the positive charge trap as theoretical calculation implies.
机译:采用第一原理方法计算了不同电荷状态的GeO_2中氧空位(Vo)的跃迁水平。 GeO_2的形成能表明块状GeO_2中存在(+2/0)固定电荷状态。 Ge价带最大值附近的(+1/0)跃迁能级表示GeO_2的正电荷陷阱。我们演示了具有热氧化作用的Ge MOS电容器。 CV的磁滞显示为负V_(fb),其偏移对应于理论计算所暗示的正电荷陷阱。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan;

    Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;

    Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;

    Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;

    Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan;

    Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan;

    Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan,Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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