A 1000V charge-storage Diode and Its Unique Application

机译：1000V电荷存储二极管及其独特应用

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A new class of charge-storage diodes and their new application are presented. The diodes achieve a high blocking voltage capability of 1000V while maintaining the unique reverse recovery process exhibiting a large storage time of 5mivsec and a following small decay time of less than 10 nsec. THese charac-teristics are accomplished by a new structure consisting of a pai(P) base and a deep P+ region. The diodes can produce a novel energy-recovery circuit tht brings a high efficiency and a large reduction in part count and cost into converters.

机译：介绍了新型的电荷存储二极管及其新应用。二极管实现了1000V的高阻断电压能力，同时保持了独特的反向恢复过程，该过程具有5mivsec的大存储时间和小于10nsec的小衰减时间。这些特性是通过由pai（P）基和深P +区域组成的新结构完成的。二极管可以产生新颖的能量回收电路，从而为转换器带来高效率并大大减少了零件数量和成本。

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《Power conversion, intelligent motion amp; HFPC conference》|1998年|p.585-590|共6页
会议地点 Tokyo(JP);Tokyo(JP)
作者
S.Shinohara; H.Kobayashi; Y.Hasegawa; R.Saito;
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原文格式 PDF
正文语种 eng
中图分类电工技术;
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4. A 1000V charge-storage Diode and Its Unique Application [C] . S.Shinohara, H.Kobayashi, Y.Hasegawa, Power electronics systems week conference exhibit . 1998

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A 1000V charge-storage Diode and Its Unique Application

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