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High-resolution smile measurement and control of wavelength- locked QCW and CW laser diode bars

机译:波长锁定的QCW和CW激光二极管棒的高分辨率微笑测量和控制

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摘要

High-power linewidth-narrowed applications of laser diode arrays demand high beam quality in the fast, or vertical, axis. This requires very high fast-axis collimation (FAC) quality with sub-mrad angular errors, especially where laser diode bars are wavelength-locked by a volume Bragg grating (VBG) to achieve high pumping efficiency in solid-state and fiber lasers. The micron-scale height deviation of emitters in a bar against the FAC lens causes the so-called smile effect with variable beam pointing errors and wavelength locking degradation. We report a bar smile imaging setup allowing FAC-free smile measurement in both QCW and CW modes. By Gaussian beam simulation, we establish optimum smile imaging conditions to obtain high resolution and accuracy with well-resolved emitter images. We then investigate the changes in the smile shape and magnitude under thermal stresses such as variable duty cycles in QCW mode and, ultimately, CW operation. Our smile measurement setup provides useful insights into the smile behavior and correlation between the bar collimation in QCW mode and operating conditions under CW pumping. With relaxed alignment tolerances afforded by our measurement setup, we can screen bars for smile compliance and potential VBG lockability prior to assembly, with benefits in both lower manufacturing costs and higher yield.
机译:激光二极管阵列的大功率线宽窄应用要求在快速或垂直轴上具有高光束质量。这就要求具有极高的快速轴准直(FAC)准直度和亚弧度角度误差,尤其是在激光二极管棒被体积布拉格光栅(VBG)锁定波长的情况下,要在固态激光器和光纤激光器中实现高泵浦效率。棒中的发射器相对于FAC透镜的微米级高度偏差会导致所谓的微笑效应,并带有可变的光束指向误差和波长锁定劣化。我们报告了一个条形微笑成像设置,它允许在QCW和CW模式下进行无FAC的微笑测量。通过高斯光束模拟,我们建立了最佳的笑容成像条件,以通过良好分辨的发射器图像获得高分辨率和准确性。然后,我们研究在热应力(例如QCW模式下的可变占空比,最终是CW操作)下,微笑形状和大小的变化。我们的微笑测量设置可提供有用的见解,以了解微笑行为以及QCW模式下的条形准直与CW抽运下的工作条件之间的关系。利用我们的测量设置所提供的宽松的对准公差,我们可以在组装前对条进行筛查以确保微笑顺应性和潜在的VBG锁定性,从而降低了制造成本,提高了产量。

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  • 来源
    《High-power diode laser technology and applications XVI》|2018年|105140Z.1-105140Z.12|共12页
  • 会议地点 San Francisco(US)
  • 作者单位

    SCD - Semiconductor Devices, P.O.Box 2250/99, Haifa 31021, Israel;

    SCD - Semiconductor Devices, P.O.Box 2250/99, Haifa 31021, Israel;

    SCD - Semiconductor Devices, P.O.Box 2250/99, Haifa 31021, Israel;

    SCD - Semiconductor Devices, P.O.Box 2250/99, Haifa 31021, Israel;

    SCD - Semiconductor Devices, P.O.Box 2250/99, Haifa 31021, Israel;

    SCD - Semiconductor Devices, P.O.Box 2250/99, Haifa 31021, Israel;

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  • 原文格式 PDF
  • 正文语种 eng
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