Theory and modeling of organic field effect transistors

机译：有机场效应晶体管的理论与建模

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In organic FET's(OFET) the active layer is an organic material. Until now measured curretn characteristics have been analyzed by using the most simple equation for the current. But the design of the OFET is nt common in electronics. As demonstrated by our 2D simulations of analogous silicon devcies tis design leads to several peculiarities. We developed analytical models which incorporate these peculiarities and reporduce the simulated current characteristics with less than 3 to 5

机译：在有机FET（OFET）中，有源层是有机材料。到目前为止，已经通过使用最简单的电流方程来分析测量的curretn特性。但是OFET的设计在电子领域并不常见。正如我们对类似硅器件的2D模拟所证明的，设计导致了许多特殊性。我们开发了包含这些特性的分析模型，并以小于3到5的比例重新模拟了模拟的电流特性

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.636-639|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
G.Paasch; S.Scheinert; R.Techlenburg;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Theory and modeling of organic field effect transistors

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