首页> 外文会议>2018年第65回応用物理学会春季学術講演会講演予稿集 >A study of the CVD growth condition for filling 50-μm 4H-SiC deep trench
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A study of the CVD growth condition for filling 50-μm 4H-SiC deep trench

机译:填充50μm4H-SiC深沟槽的CVD生长条件的研究

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Super-junction structure (SJ) has been commercially applied on Si-based power devices, due to thernimprovement on the trade-off relation between the blocking voltage (VB) and the specific on-resistancern(RonA). As for SiC material, the superior performance of using SJ structure has been experimentallyrndemonstrated by the multi-epitaxial growth method [1]. In addition, the high productivity and the epitaxialrntrench filling by chemical vapor deposition (CVD) has been confirmed feasible to construct SJ consistingrnof narrow and deep p column structure with a depth of 25 μm [2]. It is well known that, for devicesrnworking at higher blocking voltages, a much deeper p columns structure is necessary to achieve a highrndevice performance. In this work, we specified the problem found in the CVD filling process of 4H-SiCrndeep trenches and tried to explore a growth condition which is possible to fill the trenches up to 50 μm.
机译:由于提高了阻断电压(VB)与特定导通电阻(RonA)之间的折衷关系,超结结构(SJ)已商业化地应用于基于Si的功率器件。对于SiC材料,通过多外延生长法已经证明了使用SJ结构的优越性能[1]。此外,高生产率和通过化学气相沉积(CVD)进行的外延沟槽填充已被证实可用于构建深度为25μm的窄而深的p / n柱结构的SJ [2]。众所周知,对于在较高阻断电压下工作的器件,需要更深的p / n列结构以实现更高的器件性能。在这项工作中,我们指定了在4H-SiCn深沟槽的CVD填充过程中发现的问题,并试图探索可能填充至50μm的沟槽的生长条件。

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