• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >STRUCTURAL AND DIELECTRIC PROPERTIES OF Ba_(0.6)Sr_(0.4)T_iO_3 THIN FILMS
【24h】

STRUCTURAL AND DIELECTRIC PROPERTIES OF Ba_(0.6)Sr_(0.4)T_iO_3 THIN FILMS

机译：Ba_（0.6）Sr_（0.4）T_iO_3薄膜的结构和介电性能

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report a systematic study of the structural and dielectric properties of barium strontium titanate, Ba_(0.6)Sr_(0.4)T_iO_3 (BST-0.4), films grown by pulsed laser deposition on LaAlO_3 and MgO substrates. By optimizing the processing conditions, choosing appropriate substrate materials, and constructing layered architectures, we have successfully deposited BST-0.4 films on both LaAlO_3 and MgO substrates with large dielectric nonlinearity and low dielectric loss. X-ray diffraction and transmission electron microscopy analyses reveal that the dielectric tunability and the dielectric loss are closely related to the crystallinity of the BST-0.4 films. We have also observed that a small variation of D value, defined as the ratio of in-plane lattice constant/out-of-plane lattice constant, can result in a significantly large change of dielectric properties of the BST films.
机译：我们报告了钛酸钡锶钡Ba_（0.6）Sr_（0.4）T_iO_3（BST-0.4）的结构和介电性能的系统研究，该膜是通过在LaAlO_3和MgO衬底上脉冲激光沉积而生长的。通过优化工艺条件，选择合适的基板材料并构建分层体系结构，我们已成功在介电非线性大且介电损耗低的LaAlO_3和MgO基板上成功沉积了BST-0.4薄膜。 X射线衍射和透射电子显微镜分析表明，介电常数和介电损耗与BST-0.4薄膜的结晶度密切相关。我们还观察到，D值的微小变化（定义为面内晶格常数/面外晶格常数的比率）会导致BST薄膜介电性能发生很大变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号