首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >IMPROVEMENT OF IN-PLANE ALIGNMENT AND SUPERCONDUCTING CHARACTERISTICS OF SmBa_2Cu_3O_y FILM ON TEXTURED NiO/Ni SUBSTRATE BY USING BaZrO_3 BUFFER LAYER
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IMPROVEMENT OF IN-PLANE ALIGNMENT AND SUPERCONDUCTING CHARACTERISTICS OF SmBa_2Cu_3O_y FILM ON TEXTURED NiO/Ni SUBSTRATE BY USING BaZrO_3 BUFFER LAYER

机译:利用BaZrO_3缓冲层改善织构NiO / Ni基体上SmBa_2Cu_3O_y膜的平面对准和超导特性。

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It was experimentally found that the higher epitaxy was achieved in the growth of the SmBa_2Cu_3O_y films on the textured BaZrO_3 layer than that on the textured NiO layer. Although it is difficult to explain the difference by simply the idea of the lattice mismatching, the consideration of the interfacial energy including the chemical factor gives the preference in the higher epitaxy of the growth on the BZO due to the similarity of the crystal structure. The idea was confirmed by the TEM observation and the first principle calculation of the interfacial energies. Furthermore, the influence of the interfacial energy for the epitaxy in the growth was discussed and it was clarified that the system with the low interfacial energy is suitable for the nucleation and the fast lateral growth of the aligned grains.
机译:实验发现,在带纹理的BaZrO_3层上SmBa_2Cu_3O_y膜的生长比在带纹理的NiO层上的生长具有更高的外延。尽管仅通过晶格失配的概念很难解释这种差异,但是考虑到包括化学因子在内的界面能,由于晶体结构的相似性,BZO上的生长具有较高的外延性。 TEM观察和界面能的第一原理计算证实了这一想法。此外,讨论了界面能对外延生长的影响,并阐明了界面能低的体系适用于取向晶粒的成核和快速横向生长。

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