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首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >DEPOSITION of (211_(～1.0nm)/123_(～10nm))xN MULTILAYER COATED CONDUCTORS on Ni-BASED TEXTURED SUBSTRATES
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DEPOSITION of (211_(～1.0nm)/123_(～10nm))xN MULTILAYER COATED CONDUCTORS on Ni-BASED TEXTURED SUBSTRATES

机译：在镍基纹理基底上沉积（211_（〜1.0nm）/ 123_（〜10nm））xN多层涂层导体

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摘要

Properties of multilayer (211_(～1.0nm)/123_(～10nm))xNcomposite films deposited on buffer-coated rolling assisted biaxially textured (RABiT''s™) Ni-alloy substrates were investigated providing initial results. Two different RABiT''s substrates were tested: CeO_2/YSZ/CeO_2/Ni deposited in-situ prior to the YBCO composite deposition, and CeO_2/YSZ/Y_2O_3/Ni-3%W substrates prepared in an external process. Similar transport critical current densities (J_cs) at 77K in a self-field of ～ 0.6-1.0 MA/cm~2 and transition temperatures (T_cs) ～ 89-90 K were obtained for films deposited onto both architectures. These results were consistently achieved for the initial deposition parameters chosen on both substrates; no process optimization was conducted in this report. Compared to 123 films deposited on similar substrates, transport J_cs (77K, H_(appl)) were reduced slightly for H_(appl) ～ < 1.5 T, but increased on average for H_(appl) > 1.5 T. However, this is contrary to results on single crystals which had improved current densities even at H_(appl) ～ < 1.5 T; i.e. where some optimization has occurred. The surface microstructure of the multilayer films on RABiT''s substrates showed flat surfaces and greatly reduced paniculate formation, similar to multilayer deposition on single crystal substrates. However void formations were observed similar to deposition of 123 on RABiT''s, which presumably predominately resulted from defects in the buffer layer structure.
机译：研究了多层（211_（〜1.0nm）/ 123_（〜10nm））×N复合膜在缓冲涂层轧制辅助双轴织构（RABiT's™）镍合金基底上的性能，提供了初步的结果。测试了两种不同的RABiT基板：在YBCO复合沉积之前原位沉积的CeO_2 / YSZ / CeO_2 / Ni，以及在外部过程中制备的CeO_2 / YSZ / Y_2O_3 / Ni-3％W基板。对于沉积在两种结构上的薄膜，在约0.6-1.0 MA / cm〜2的自电场中，在77K处具有相似的传输临界电流密度（J_cs），过渡温度（T_cs）约为89-90K。对于在两个基板上选择的初始沉积参数，这些结果始终如一。此报告中未进行任何流程优化。与沉积在类似基板上的123个膜相比，H_（appl）〜<1.5 T时，传输J_cs（77K，H_（appl））略有减少，但H_（appl）> 1.5 T时，传输J_cs平均增加。结果表明，即使在H_（appl）〜<1.5 T，电流密度也得到改善的单晶；即发生了一些优化的地方。与在单晶衬底上的多层沉积相似，RABiT衬底上的多层膜的表面微观结构显示出平坦的表面并大大减少了颗粒的形成。然而，观察到空隙形成类似于RABiT's上的123的沉积，这大概主要是由于缓冲层结构中的缺陷造成的。

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