Transition metal doped TiO_2 thin films epitaxially grown by reactive sputter deposition

机译：反应溅射沉积外延生长的过渡金属掺杂TiO_2薄膜

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In recent years, ferromagnetic semiconductors have been extensively explored as potential candidates for spin injection in spin electronic devices operating at room temperature. In this report, transition metal(TM) doped TiO_2 thin films were epitaxially grown by reactive magnetron sputtering. X-ray diffraction pattern indicates that these TM doped thin films are single crystal-like anatase films. Field emission SEM shows that surface segregation of Co was observed in the film for the 7 at% Co-doped TiO_2 anatase films. The resistivity and carrier concentration for Co_(0.07)Ti_(0.93)O_2 was 7.18Ω-cm and 8.09x10~(17). This semiconductor material was N-type. The hysteresis of this material shows the strong ferromagnetic behavior at room temperature.

机译：近年来，铁磁半导体已被广泛探索为在室温下运行的自旋电子设备中自旋注入的潜在候选物。在该报告中，通过反应磁控溅射外延生长了掺有过渡金属TM的TiO_2薄膜。 X射线衍射图表明这些TM掺杂的薄膜是单晶状锐钛矿薄膜。场发射SEM显示，对于7at％Co掺杂的TiO 2锐钛矿膜，在膜中观察到Co的表面偏析。 Co_（0.07）Ti_（0.93）O_2的电阻率和载流子浓度为7.18Ω-cm和8.09x10〜（17）。该半导体材料是N型的。这种材料的磁滞在室温下显示出很强的铁磁性能。

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《Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US)》|2003年|P.224-239|共16页
会议地点 OrlandoFL(US)
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B.-S. Jeong; Y.W. Heo; J. D. Budai; Y. D. Park; D. P. Norton;
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University of Florida, Dept. of Materials Science and Engineering, 100 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, U.S.A.;

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Transition metal doped TiO_2 thin films epitaxially grown by reactive sputter deposition

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