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首页> 外文会议>Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US) >ENHANCEMENT OF MANUFACTURIBILITY IN POLYCRYSTALLINE SILICON PROCESS BY USING DISILANE PRECURSOR AT 65NM CMOS TECHNOLOGY
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ENHANCEMENT OF MANUFACTURIBILITY IN POLYCRYSTALLINE SILICON PROCESS BY USING DISILANE PRECURSOR AT 65NM CMOS TECHNOLOGY

机译：在65NM CMOS工艺中使用二硅烷前体增强多晶硅工艺的可制造性

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摘要

As integrated circuit manufacturing moves to the 65 nm technology and beyond, it is important to develop a polycrystalline silicon process that has smoother surface topography for optimum transistor performance and device yield. In this paper, we have studied the polycrystalline silicon deposited by rapid thermal chemical vapor deposition (RTCVD) using silane (SiH_4) and disilane (Si_2H_6) precursors, at temperatures from 700 ℃ to 740 ℃. The results show that the polycrystalline silicon deposited using disilane precursor has ～ 50% improvement in the thickness uniformity and ～25% improvement in surface roughness, as shown by atomic force microscopy (AFM). The grain structure of as-deposited and post-implant and annealed films have been compared by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM). NMOS and PMOS capacitors have been fabricated with polycrystalline silicon using silane and disilane precursors. The grain structure and electrical parameters, such as gate leakage currents and gate capacitance, show no significant difference between these two precursors. No degradation in particle performance was observed for disilane.
机译：随着集成电路制造向65纳米技术及更高水平发展，开发具有更平滑表面形貌的多晶硅工艺以实现最佳晶体管性能和器件良率非常重要。在本文中，我们研究了使用硅烷（SiH_4）和乙硅烷（Si_2H_6）前驱体通过快速热化学气相沉积（RTCVD）沉积的多晶硅，温度为700℃至740℃。结果表明，如原子力显微镜（AFM）所示，使用乙硅烷前体沉积的多晶硅厚度均匀性提高了约50％，表面粗糙度提高了约25％。通过X射线衍射（XRD）和透射电子显微镜（TEM）比较了沉积后，植入后和退火后薄膜的晶粒结构。 NMOS和PMOS电容器已使用硅烷和乙硅烷前体与多晶硅一起制成。晶粒结构和电参数（例如栅极泄漏电流和栅极电容）在这两种前驱物之间没有显着差异。对于乙硅烷，未观察到颗粒性能的降低。

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