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A deep-submicron single gate CMOS technology using in-situ boron-doped polycrystalline silicon-germanium gates formed by rapid thermal chemical vapor deposition

机译：一种深亚微米单栅极CMOS技术，使用通过快速热化学气相沉积形成的原位掺杂硼的多晶硅锗锗栅极

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作者
Li, Vivian Zhi-Qi;
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作者单位

North Carolina State University;

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授予单位 North Carolina State University;
学科
学位 Ph.D.
年度 1997
页码 231 p.
总页数 231
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Structural and mechanical characterization of in-situ phosphorus-doped rapid thermal low pressure chemical vapor deposition polycrystalline silicon films [J] . S. Kallel, B. Semmache, M. Lemiti Microelectronics Journal . 1999,第7期

机译：原位掺磷快速热低压化学气相沉积多晶硅膜的结构和力学性能
2. Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition [J] . P. Masson, P. Morfouli, J.L. Autran Microelectronic Engineering . 1999,第1a4期

机译：低压快速热化学气相沉积形成的具有氮氧化物栅极电介质的n沟道MOSFET的电学特性
3. Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition [J] . Vogel E.M., Hill W.L. IEEE Transactions on Electron Devices . 1996,第5期

机译：具有通过低压快速热化学气相沉积形成的氮氧化物栅极电介质的n沟道和p沟道MOSFET的迁移行为
4. The Effect of Deposition Temperature on Grain Structure and Electrical Properties of Amorphous and Polycrystalline Silicon Fabricated by Rapid Thermal Chemical Vapor Deposition for the Application of CMOS Gate Electrodes [C] . Y. Chen, Y. Ma, W. H. Koh International Symposium on Rapid Thermal and Other Short-Time Processing Technologies II, Mar 24-29, 2001, Washington DC . 2001

机译：沉积温度对快速热化学气相沉积法制备的CMOS栅电极非晶和多晶硅晶粒结构和电学性能的影响
5. Interpoly oxide for floating gate memory devices fabricated by rapid thermal chemical vapor deposition [D] . Heinisch, Holger Hans. 1998

机译：通过快速热化学气相沉积制造的用于浮栅存储器件的共聚氧化物
6. Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition [O] . Berc Kalanyan, William A. Kimes, Ryan Beams, -1

机译：脉冲金属有机化学气相沉积法快速制备多晶2H-MoS2晶片规模
7. High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates [O] . Ponomarev, Youri V., Stolk, Peter A., Salm, Cora, 2000

机译：具有多晶SiGe栅极的高性能深亚微米CMOS技术
8. Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's [R] . Sturm, J. C. 2001

机译：用于双栅极亚100nm mOsFET的快速热化学气相沉积

A deep-submicron single gate CMOS technology using in-situ boron-doped polycrystalline silicon-germanium gates formed by rapid thermal chemical vapor deposition

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