STRUCTURE AND DYNAMICS OF SI INTERSTITIALS AT SI(001) AND SI(001)/SIO_2

机译：SI（001）和SI（001）/ SIO_2的SI间隙的结构和动力学

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Using density functional theory calculations within the generalized gradient approximation we have investigated the atomic and electronic structures and diffusion behavior of Si interstitials at the clean and H-terminated Si(001) surface and at the c-Si/a-SiO_2 interface. We find that interstitials are significantly stabilized at the surfaces and interfaces. Along with structure and energetics, we analyze the bonding mechanisms of interstitials based on electron density and electron localization function topologies.

机译：使用广义梯度近似内的密度泛函理论计算，我们研究了Si间隙在干净且H端接的Si（001）表面和c-Si / a-SiO_2界面上的原子和电子结构以及扩散行为。我们发现，插页式广告在表面和界面处明显稳定。连同结构和能量学，我们基于电子密度和电子局部化功能拓扑分析了间隙的键合机理。

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《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.112-119|共8页
会议地点 San AntonioTX(US)
作者
Taras A. Kirichenko; Decai Yu; Sanjay K. Banerjee; Gyeong S. Hwang;
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Microelectronics Research Center, University of Texas, Austin, Texas 78712;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
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STRUCTURE AND DYNAMICS OF SI INTERSTITIALS AT SI(001) AND SI(001)/SIO_2

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