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首页> 外文会议>Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US) >CMOS OPTOELECTRONICS
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CMOS OPTOELECTRONICS

机译：CMOS光电

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摘要

The advanced Si-based technology can not only increase the speed and integration density for electronic integrated circuits, but also possibly increase the functionality of Si chips such as optoelectronics applications. The ultrathin insulator of metal-insulator-semiconductor (MIS) structures can allow a significant tunneling gate current, which can be used in the light emission devices and the photodetectors, while this large gate current is not desired in ultra-large scale integration circuit applications. The electro-optical devices including light emitting diodes (LED) and photodetectors are successfully demonstrated. The Si metal-oxide-semiconductor (MOS) LED can have visible light and 1.1 μm light emission. The emission intensity can be enhanced by increasing insulator/Si interface roughness and using HfO_2 as gate dielectric material. The Si MOS detector has a cutoff wavelength ～ 1.2 μm. With the Ge quantum dot structure, the detector has the responsivity of 0.6 AAV, 0.34 and 0.03 mA/W at 850, 1310, and 1550 nm, respectively. The valence band transition due to the Si/Ge heterostrucutres of the MIS Si/Ge quantum dot device also produces the absorption at 2～3 μm and 3～10 μm for the quantum dot and the quantum well transition with the operation temperature of 200 ℃ and 140 ℃, respectively.
机译：先进的基于Si的技术不仅可以提高电子集成电路的速度和集成密度，而且还可以提高诸如光电应用之类的Si芯片的功能。金属绝缘体半导体（MIS）结构的超薄绝缘体可允许显着的隧穿栅极电流，可在发光器件和光电检测器中使用，而在超大规模集成电路应用中不需要此大栅极电流。成功地演示了包括发光二极管（LED）和光电探测器的电光设备。硅金属氧化物半导体（MOS）LED可以具有可见光和1.1μm的光发射。可以通过增加绝缘体/ Si界面粗糙度并使用HfO_2作为栅极介电材料来增强发射强度。 Si MOS检测器的截止波长约为1.2μm。采用Ge量子点结构，检测器在850、1310和1550 nm处的响应度分别为0.6 AAV，0.34和0.03 mA / W。 MIS Si / Ge量子点器件的Si / Ge异质结构引起的价带跃迁还产生了在2〜3μm和3〜10μm处对量子点的吸收以及在200℃的工作温度下的量子阱跃迁。和140℃。

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