BAND ALIGNMENT ISSUES IN METAL/DIELECTRIC STACKS: A COMBINED PHOTOEMISSION AND INVERSE PHOTOEMISSION STUDY OF THE HfO_2/Pt AND HfO_2/Hf SYSTEMS

机译：金属/介电叠层的带对准问题：HfO_2 / Pt和HfO_2 / Hf系统的光合作用和反光合作用的组合研究

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We have studied the HfO_2/Hf and HfO_2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

机译：我们已经通过光发射和逆光发射光谱学研究了HfO_2 / Hf和HfO_2 / Pt系统。发现多层结构中的金属的“有效功函数”不同于其真空功函数，并且被金属/高k界面处的界面偶极子所修饰。 Hf的有效功函数为4.4 eV，而Pt的有效功函数为5.3 eV，分别在PMOS和NMOS的可接受值范围内。

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《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.255-263|共9页
会议地点 San AntonioTX(US)
作者
S. Sayan; R.A. Bartynski; J. Robertson; J.S. Suehle; E. Vogel; N.V. Nguyen; J. Ehrstein; J.J. Kopanski; S. Suzer; M. Banaszak Holl; E. Garfunkel;
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Department of Chemistry, Rutgers University, Piscataway, NJ 08854;

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正文语种 eng
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BAND ALIGNMENT ISSUES IN METAL/DIELECTRIC STACKS: A COMBINED PHOTOEMISSION AND INVERSE PHOTOEMISSION STUDY OF THE HfO_2/Pt AND HfO_2/Hf SYSTEMS

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