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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >MODELING OF INTERNAL GETTERING FOR METAL IMPURITIES BY OXIDE PRECIPITATES IN CZ-SI WAFERS
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MODELING OF INTERNAL GETTERING FOR METAL IMPURITIES BY OXIDE PRECIPITATES IN CZ-SI WAFERS

机译：CZ-SI晶片中氧化物沉淀物对金属杂质内部吸杂的建模

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摘要

Internal gettering (IG) for metal impurities by oxide precipitates was simulated with a gettering simulator, in which the diffusion and reaction processes were involved. In this simulator the morphology of oxide precipitates was considered. It was found that the diffusion-limited model, which well explained Fe gettering, could not explain the reported experimental results of Ni and Cu gettering. IG for Ni and Cu contamination was analyzed to be reaction-limited. The simulator also showed that (?) a higher density of precipitates provides more efficient getteing sites than a low density of larger precipitates, and (ⅱ) the precipitate morphology of platelet is more effective for IG than that of sphere. Further, the oxide precipitates with high density of about 1 x 10~(12)/cm~3 should be prepared just below the device active region in RTA process. The present IG model was combined with the reported oxygen precipitation model. These models make possible to control the oxygen precipitation for optimized IG.
机译：使用吸气模拟器模拟了氧化物沉淀物对金属杂质的内部吸气（IG），其中涉及了扩散和反应过程。在该模拟器中，考虑了氧化物沉淀的形态。发现很好地解释了Fe吸杂的扩散限制模型不能解释所报道的Ni和Cu吸杂的实验结果。分析了镍和铜污染的IG受反应限制。该模拟器还表明，（）较高的沉淀物密度比低密度的较大沉淀物提供了更有效的脱毒部位，并且（ⅱ）血小板的沉淀物形态对IG的作用比球形的更有效。此外，在RTA工艺中，应在器件有源区正下方制备高密度约1 x 10〜（12）/ cm〜3的氧化物沉淀。本IG模型与所报道的氧气沉淀模型相结合。这些模型可以控制氧气沉淀以优化IG。

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