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首页> 外文会议>Proceedings vol.2004-17; Electrochemical Society(ECS) Meeting and Symposium on Electrochemical Process in ULSI and MEMS; 2004 Spring; San Antonio,TX(US) >SUPERCONFORMAL ELECTROCHEMICAL DEPOSITION OF GOLD FOR INTERCONNECTS IN INTEGRATED CIRCUITS
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SUPERCONFORMAL ELECTROCHEMICAL DEPOSITION OF GOLD FOR INTERCONNECTS IN INTEGRATED CIRCUITS

机译：用于集成电路中互连的金的超保形电化学沉积

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摘要

A novel process for superconformal electrochemical deposition of gold has been proposed and demonstrated with a sulfite-hased gold electrolyte. The key to achieving superconformal deposition of gold is the use of organic additives such as thiols and disul fides that interact strongly with gold and consequently influence heterogeneous electron transfer reaction. In contrast to superconformal deposition of copper, where multiple additives are needed, we found that bottom-up deposition of gold could be achieved using a single additive. In addition, the thiol or disulfide additive functions as a suppressor that hinders electrochemical deposition of gold, rather than as an accelerator that promotes the deposition of copper in systems involving multiple additives. At the optimized process conditions aggressive features (i.e., cavities) such as those that are straight-walled and even re-entrant were completely filled without voids. These results suggest that the driving force leading to superconformal deposition of gold in the presence of thiol and disulfide species may stem from the depletion of the species inside features as a result of its consumption and limited supply.
机译：已经提出了一种新的超保形电化学沉积金的方法，并用亚硫酸盐处理的金电解质进行了证明。实现金超保形沉积的关键是使用有机添加剂（例如硫醇和二硫化物），它们与金形成强烈的相互作用，从而影响异质电子转移反应。与需要使用多种添加剂的铜的超保形沉积相反，我们发现可以使用一种添加剂实现金的自底向上沉积。另外，硫醇或二硫化物添加剂起阻碍金的电化学沉积的抑制剂的作用，而不是在涉及多种添加剂的体系中起促进铜沉积的促进剂的作用。在优化的工艺条件下，诸如直壁甚至凹入的侵蚀性特征（即空腔）被完全填充而没有空隙。这些结果表明，在存在硫醇和二硫键物质的情况下，导致金超保形沉积的驱动力可能是由于其消耗和供应有限而导致的特征内部物质的耗尽。

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