The open circuit potential (OCP) of copper (Cu) was measured at various concentrations of IO_3~-, H_2O_2 and Fe~(3+) ion at pH 2 using the rotating disk electrode technique. H_2O_2 was observed as very effective oxidant for Cu as compared to Fe~(3+) and IO_3~- ions at the OCP at pH 2. Both H_2O_2 and Fe~(3+) ion were found to reduce under total control of kinetics, whereas IO_3~- ion was observed to reduce under mixed control of kinetics and diffusion on the Cu surface at the OCP. The Cu polishing rate was estimated to be higher with the H_2O_2 based slurries as compared to the IO_3~- and Fe~(3+) ion based slurries. Surface planarity, however, was estimated to be better with the Fe~(3+) ion based slurries as compared to the IO_3~- and H_2O_2 based slurries.
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