Chemical mechanical planarization (CMP) is a surface finishing methodology of critical importance in the fabrication of multilevel metallized interconnects. CMP relies on a combination of mechanical material removal from asperities on the wafer surface, while low regions are protected by components of the slurry. Corrosion inhibitors such as benzotriazole (BTA) are added to the polishing slurry, forming a protective layer over the surface.
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