In_(0.3)Ga_(0.7)As PLATE CRYSTAL GROWTH FOR SUBSTRATES BY THE TLZ METHOD

机译：TLZ法测定In_（0.3）Ga_（0.7）As基片的晶体生长

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We have succeeded in growing plate shaped In_(0.3)Ga_(0.7)As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In_(0.3)Ga_(0.7)As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

机译：我们已经通过行进液相线区（TLZ）方法成功地生长了平板状In_（0.3）Ga_（0.7）As单晶，用于衬底。我们发明的用于生长均匀混合晶体的TLZ方法要求扩散受限的质量传递，应避免在熔体中对流。在这一点上，由于对流，难以生长用于基板的大直径晶体。因此，我们试图生长板状的In_（0.3）Ga_（0.7）As晶体。板状晶体的优点是通过限制板的厚度和足够的基板面积来抑制晶体生长过程中熔体中的对流。

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《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》|2005年|P.367-373|共7页
会议地点 Quebec City(CA)
作者
K. Kinoshita; Y. Ogata; S. Adachi; M. Natsuisaka; T. Ishikawa; T. Masaki; S. Yoda;
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ISS Science Project Office, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency;

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正文语种 eng
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机译：GaAs（100）衬底取向错误对变质In_（0.7）Al_（0.3）As / In_（0.75）Ga_（0.25）As / In_（0.7）Al_（0.3）As HEMT纳米异质结构的电参数和表面形态的影响
2. Photoluminescence Studies of In_(0.7)Al_(0.3)As/In_(0.75)Ga_(0.25)As/In_(0.7)Al_(0.3)As Metamorphic Heterostructures on GaAs Substrates [J] . G. B. Galiev, E. A. Klimov, A. N. Klochkov, Semiconductors . 2014,第5期

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3. Convection Effects on Crystallinity in the Growth of In_(0.3)Ga_(0.7) as Crystals by the Traveling Liquidus Zone Method [J] . KYOICHI KINOSHITA, YASUYUKI OGATA, SATOSHI ADACHI, Annals of the New York Academy of Sciences . 2006,第Sep期

机译：液相线移动法研究In_（0.3）Ga_（0.7）晶体生长中的对流效应
4. In_(0.3)Ga_(0.7)As PLATE CRYSTAL GROWTH FOR SUBSTRATES BY THE TLZ METHOD [C] . K. Kinoshita, Y. Ogata, S. Adachi, Electrochemical Society Meeting . 2005

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In_(0.3)Ga_(0.7)As PLATE CRYSTAL GROWTH FOR SUBSTRATES BY THE TLZ METHOD

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