首页>外文会议>电子学、通信>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C

Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C

召开年：
召开地：
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

最新会议

更多>>

全选（0）

1.GAN-BASED AND ZNO NANOROD SENSORS FOR WIRELESS HYDROGEN LEAK DETECTION

机译：基于GAN的Zno纳米传感器用于无线氢泄漏检测
- 作者：J. Lin;A. El Kouche;M. E. Law;F. Ren;B. S. Kang;S. J. Pearton;D. P. Norton;C. R. Abernathy
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
2.PASSIVATION OF Ⅲ/Ⅴ-BASED COMPOUND SEMICONDUCTOR DEVICES USING HIGH-DENSITY PLASMA DEPOSITED SILICON NITRIDE FILMS

机译：高密度等离子体沉积硅氮化物膜对基于Ⅲ/Ⅴ的复合半导体器件的钝化
- 作者：R. E. Sah;M. Mikulla;H. Schneider;F. Benkhelifa;M. Dammann;R. Quay;J. Fleissner;M. Walther;G. Weimann
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
3.RPCVD SILICON NITRIDE PASSIVATION OF INGAASP WITH TEMPERATURE RAMPING DURING DEPOSITION

机译：沉积过程中温度升高将RPCVD硅氮化物钝化
- 作者：Jaeho Kim;Jung-Ho Cha;Man-Lyun Ha;Choul-Young Kim;Young-Se Kwon
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
4.SURFACE REACTIVITY OF INSB STUDIED BY CYCLIC VOLTAMMETRY COUPLED TO XPS

机译：用XPS耦合的伏安法研究INSB的表面反应性。
- 作者：B. Kuenstler;B. Erne;F. Lefevre;D.Lorans;B. Canava;M. Herlem;A. Etcheberry
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
5.The Use of GaN Based Electronic And Photonic Devices for Bio-Applications

机译：氮化镓基电子和光子器件在生物应用中的应用
- 作者：F.Ren;B. S. Kang;S.J.Pearton;D.P. Norton;Y.W. Kwon;K. H. Baik;G. Louche;R. S. Duran;Y. Gnanou
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
6.STUDY OF THE FLAT BAND POTENTIAL OF INP IN LIQUID AMMONIA: A NERNSTIAN BEHAVIOR?

机译：液氨中INP的平带势研究：能斯特行为？
- 作者：A-M Goncalves;C. Mathieu;M. Herlem;A. Etcheberry
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
7.10 GB/S AND 40 GB/S INTEGRATED ELECTROABSORPTION MODULATORS ON NOVEL SUBMOUNTS

机译：新型子底座上的10 GB / S和40 GB / S集成电吸收调制器
- 作者：Yi LUO;Bing XIONG;Jian WANG;Changzheng SUN
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
8.In_(0.3)Ga_(0.7)As PLATE CRYSTAL GROWTH FOR SUBSTRATES BY THE TLZ METHOD

机译：TLZ法测定In_（0.3）Ga_（0.7）As基片的晶体生长
- 作者：K. Kinoshita;Y. Ogata;S. Adachi;M. Natsuisaka;T. Ishikawa;T. Masaki;S. Yoda
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
9.IN SEARCH OF HIGHER DENSITY MIM CAPACITOR FOR GAAS RF POWER APPLICATIONS

机译：搜索用于GAAS射频功率的高密度MIM电容器
- 作者：Jiro Yota;Ravi Ramanathan;Kai Kwok;Jose Arreaga;Tin Ko;Hongxiao Shao
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
10.BCB Deep Via Etching Process on ICP Etching System

机译：ICP刻蚀系统的BCB深孔刻蚀工艺
- 作者：J. J. Wang;X. Zeng;D. Li;C. Monier;P. C. Chang;M. Barsky;A. Gutierrez-Aitken
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
11.ELECTROCHEMISTRY AND ETCHING OF WIDE BANDGAP CHEMICALLY RESISTANT SEMICONDUCTORS

机译：宽带隙化学耐性半导体的电化学和蚀刻
- 作者：J.J. Kelly;L. Macht;D.H. van Dorp;M.R. Kooijman;J.L. Weyher
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
12.Dot pattern epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxy

机译：氢化物气相外延生长的GaN点阵图形外延横向过生长
- 作者：W.Y.Liu;J.D.Tsay;Y.D.Guo;H.P.Liu;R.C.Yeh
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
13.EFFECTS OF INTERFACIAL NATIVE OXIDE ON ELECTRICAL PROPERTIES OF BONDED GAAS WAFERS

机译：界面天然氧化物对键合气体晶片电学性能的影响
- 作者：Po Chun Liu;Cheng Lun Lu;Wei Chih Peng;YewChung Sermon Wu;Hao Ouyang
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
14.Effects of in- and anti-phase bonding and type of dopant on the microstructures of nano-scaled interface and electrical properties of N/P-type GaAs wafers (at and below 600℃)

机译：同相和反相键合以及掺杂剂类型对N / P型GaAs晶片（600℃及以下）的纳米级界面微观结构和电性能的影响
- 作者：Ji-Hao Cheng;Hao Ouyang;Cheng-Lun Lu;Yew-Chung Sermon Wu;Shan-Haw Chiou
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
15.Preparation and characterization of ZnO film on Si(111) substrate with SiC buffer layer deposited by MOCVD

机译：MOCVD沉积SiC缓冲层的Si（111）衬底上ZnO薄膜的制备与表征
- 作者：Zhuxi Fu;Junjie Zhu;Bixia Lin;Xiankai Sun;Ran Yao
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
16.ON THE EFFECT OF SURFACE PRETREATMENT UPON THE ELECTRONIC STRUCTURE OF N-GAN SURFACES

机译：表面预处理对N-GAN表面电子结构的影响
- 作者：K. Strubbe;W.P. Gomes;I.M. Huygens
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
17.NITROGEN INCOPPORATION IN GAASN GROWN BY CHEMICAL BEAM EPITAXY

机译：化学束外延在GAASN中氮的吸收
- 作者：Y. Ohshita;K. Nishimura;H. S. Lee;N. Kojima;I. Gono;H. Suzuki;M. Yamaguchi
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
18.LUMINESCENT AND ELECTRIC PROPERTIES OF ZNO:LI FILMS DERIVED BY SOL-GEL

机译：溶胶凝胶法制备的Zno：Li薄膜的发光和电学性质
- 作者：Bixia Lin;Rongguo Zhou;Zhuxi Fu
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
- ZnO film;
- sol-gel;
- Li doping;
- Ⅰ-Ⅴ character;
- ultraviolet emission;
19.LASER-SYNTHESIS OF OPTICAL STRUCTURES IN SILICON CARBIDE

机译：碳化硅光学结构的激光合成
- 作者：Z. Tian;N.R.Quick;A. Kar
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
20.Photocatalytic Activity of Visible Light Active Carbon modified (CM)-n-TiO_2 Nanoparticles

机译：可见光活性炭改性（CM）-n-TiO_2纳米粒子的光催化活性
- 作者：Chengkun Xu;Shahed U. M. Khan
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
21.GROWTH OF POROUS INP IN ACIDIC LIQUID AMMONIA

机译：酸性液氨中多孔InP的生长
- 作者：A.-M. Goncalves;I. Gerard;L. Santinacci;C. Mathieu;M. Herlem;A. Etcheberry
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
22.GRAIN SIZE OF LEAD SELENIDE ELECTRODEPOSITED ONTO INP FOLLOWED BY PHOTOLUMINESCENCE OF THE INP SUBSTRATE

机译：铟基质的光致发光后，电沉积到INP上的硒化铅晶粒尺寸
- 作者：I. Gerard;M. Froment;H. Cachet;A. Etcheberry
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
23.HIGH PERFORMANCE ALGAN/GAN HFETS FOR RF APPLICATIONS

机译：用于射频应用的高性能Algan / GAN HFET
- 作者：Y. Hirose;H. Ishida;T. Murata;M. Hikita;K. Inoue;Y. Uemoto;T. Tanaka;D. Ueda
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
24.SYNTHESIS OF ONE-DIMENSIONAL GAN NANOSTRUCTURES AND GAN/CNT/SI/SILICATE NANOCABLES BY METALORGANIC CHEMICAL VAPOR DEPOSITION

机译：金属有机化学气相沉积法合成一维GAN纳米结构和GAN / CNT / SI /硅酸盐纳米材料
- 作者：L.J. Chen;M.C. Lu;Y.L. Chueh;L.J. Chou;H.L. Hsiao
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
25.SUB-MICRON INP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR WITH GREATER THAN 400GHZ F_T AND F_(MAX)

机译：亚微米INP双异质结双极晶体管，具有大于400GHZ的F_T和F_（MAX）
- 作者：P. C. Chang;D. Sawdai;V. Gambin;X. Zeng;D. Li;J. Yamamoto;K. Loi;G. S. Leslie;J. Wang;R. Elmadjian;P. Nam;C. Grossman;M. Barsky;A. Gutierrez-Aitken;A. Oki
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
26.SELF-ORGANIZED PORES IN INP AND GAP

机译：INP和GAP中的自组织毛孔
- 作者：J. Wloka;H. Tsuchiya;P. Schmuki
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
27.SELECTIVE AREA MOVPE FOR GAAS ON (100) MISORIENTED SUBSTRATES

机译：GAAS上的选择性区域移动（100个）错误的基材
- 作者：Haizheng Song;Xueliang Song;Masakazu Sugiyama;Yoshiaki Nakano;Yukihiro Shimogaki
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
28.Wet Chemical Etching of Compound Semiconductors

机译：化合物半导体的湿法化学蚀刻
- 作者：S.J.Pearton;F.Ren
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
29.ZnO Spintronics and Nanowire Devices

机译：ZnO自旋电子学和纳米线器件
- 作者：S.J.Pearton;D.P.Norton;Y.W.Heo;L.C.Tien;M.P.Ivill;Y.Li;Sang Youn Han;B.S.Kang;F.Ren;J.Kelly;A.F.Hebard;C.J.Kao;G.C.Chi
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
30.THERMAL STABILITY OF TUNGSTEN-BASED SCHOTTKY CONTACTS TO N-TYPE ZNO

机译：钨基肖特基触头对N型ZNO的热稳定性
- 作者：K. Ip;Rohit Khanna;D.P. Norton;S.J. Pearton;F. Ren;I. Kravchenko;C.J. Kao;G.C. Chi
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
31.AN INVESTIGATION OF CURRENT OSCILLATIONS ON N-INP IN SULPHIDE-BASED ELECTROLYTES AT ANODIC POTENTIALS

机译：阳极电位上硫化物基电解质中N-INP的当前振荡研究
- 作者：T. Melly;D. N. Buckley;S. B. Newcomb
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
32.CORRELATION BETWEEN PHOTOLUMINESCENCE N-INP AND MORPHOLOGY OF CU ELECTRODEPOSITION

机译：铜电沉积光致发光N-INP与形貌的相关性
- 作者：Pierre Iran-Van;Isabelle Gerard;Deborah Segall;Charlotte Saint-Lu;A. Etcheberry
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
33.COMPARATIVE STUDY OF OPTICAL PROPERTIES OF NANOPOROUS GAN PREPARED BY UV-ASSISTED ELECTROCHEMICAL AND ELECTROLESS ETCHING

机译：紫外线辅助电化学和无电刻蚀制备的纳米镓的光学性能比较研究
- 作者：A. P. Vajpeyi;S. Tripathy;S. J. Chua;J. Arokiaraj;E. A. Fitzgerald
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
34.AUGER AND LEED STUDIES OF THE SURFACE CHEMISTRY OF INP(100) WAFERS AFTER WET ETCHING, ION BOMBARDMENT, AND ELECTROCHEMICAL ETCHING

机译：湿法刻蚀，离子轰击和电化学刻蚀后INP（100）晶片表面化学的Auer和LEED研究
- 作者：Madhivanan Muthuvel;John Stickney
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
35.MMIC COMPATIBLE LATERAL DEFLECTION RF MEMS SWITCHES

机译：MMIC兼容的横向偏转RF MEMS开关
- 作者：Patty P. Chang-Chien
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
- MEMS;
- MEMS switch;
- RF MEMS;
- lateral deflection;
- micromachined MEMS switch;
- DC contact switch;
- wafer-level packaging;
- hermetic packaging;
36.INACTIVATION OF THE JUNCTION SURFACES IN SIGE/SI DIODES

机译：SIGE / SI二极管中接合表面的失活
- 作者：FUMIHIKO HIROSE;MASASHI MUKAIDA
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
37.IMPROVEMENT OF III-N SURFACES AFTER INDUCTIVELY COUPLED PLASMA DRY ETCH EXPOSURE

机译：电感耦合等离子体干刻蚀暴露后对III-N表面的改进
- 作者：D.M. Keogh;R.D. DuPuis;M. Feng;S.Raychaudhuri;P.M. Asbeck
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
38.ELECTRODEPOSITION OF CHALCOGENIDE SEMICONDUCTORS

机译：硫族化物半导体的电沉积
- 作者：Daniel Lincot
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
39.ELECTROGENERATED CHEMILUMINESCENCE FROM SINGLE CADMIUM SELENIDE NANOCRYSTALS

机译：单硒化镉纳米晶体的电化学发光
- 作者：Jigang Zhou;Jun Zhu;Zhifeng Ding
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
40.NOVEL OXIDES AND RELIABILITY FOR THE PASSIVATION OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTOR

机译：新型氧化物和用于钝化Algan / GAN高电子迁移率晶体管的可靠性
- 作者：B.P. Gila;A.H. Onstine;M. Hlad;A. Gerger;A. Herrero;K.K. Allums;D. Stodilka;S. Jang;B. Kang;T. Anderson;C. R. Abernathy;F. Ren;S.J. Pearton
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
41.NATURAL LITHOGRAPHY OF SILICON SUBSTRATE USING SELF-ORDERED ANODIC ALUMINA AND NANOSPHERES

机译：自定阳极氧化铝和纳米球对硅基质的自然光刻
- 作者：Sachiko Ono;Hidetaka Asoh
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
42.NANOELECTRONICS ON SEMICONDUCTOR/SOLUTION INTERFACES

机译：半导体/溶液界面上的纳米电子
- 作者：W. Wiesbeck;Ph. Hugelmann;M. Hugelmann;W. J. Lorenz
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
43.NANOPOROUS INP: ANODIC FORMATION AND GROWTH MECHANISM IN AQUEOUS ELECTROLYTES

机译：纳米Inp：电解质中的阳极形成和生长机理
- 作者：C. ODwyer
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
44.MULTILEVEL PLATED GOLD INTERCONNECTS FOR HEMT MMIC COMPACTION

机译：用于HEMT MMIC压紧的多级镀金互连
- 作者：J. Uyeda;J. Wang;R. Elmadjian;M. Barsky;R. Grundbacher;K. Luo;L. Dang;C. Cheung;J. Lee;D. Li;D. Farkas;R. Lai
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
45.Multi-Energy Oxygen Ion Implantation Isolation for AlGaN/GaN HEMTs

机译：AlGaN / GaN HEMT的多能量氧离子注入隔离
- 作者：Jin-Yu Shiu;Yi Shan Shoau;Jui-Chien Huang;Yen-Chang Hsieh;Chia-Ta Chang;Chung-Yu Lu;Edward Y. Chang
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
46.POLARITY-CONTROLLED GROWTH OF HIGH-QUALITY ZNO EPITAXIAL FILMS

机译：高质量ZNO外延膜的极性控制生长
- 作者：X.L. Du;Z.X. Mei;Z.Q. Zeng;M.J. Ying;Y. Wang;Y.Z. Liu;Z. T. Zhou;L.W. Guo;J.F. Jia;Q.K. Xue;Z. Zhang
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
47.PREPARATION OF CLEAN ACID-TERMINATED MONOLAYERS ON SILICON (111) SURFACES

机译：在硅（111）表面上制备干净的酸封端的单分子膜
- 作者：A. Faucheux;A.-C. Gouget-Laemmel;C. Douarche;C. Henry de Villeneuve;F. Ozanam;P. Allongue;J.-N. Chazalviel;R. Boukherroub
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年
48.Performance and Reliability of InGaN-GaN Light-Emitting Diodes with Mirror Wafer Bonding Technology

机译：镜面晶圆键合技术的InGaN-GaN发光二极管的性能和可靠性
- 作者：W.C. Peng;Y. C. Sermon Wu;W. H. Liu;S. C. Horng;M. H. Hsieh
- 会议名称：《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》 | 2005年