• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >LASER-SYNTHESIS OF OPTICAL STRUCTURES IN SILICON CARBIDE
【24h】

LASER-SYNTHESIS OF OPTICAL STRUCTURES IN SILICON CARBIDE

机译：碳化硅光学结构的激光合成

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A laser direct write process is used to selectively modify the surface and internal optical properties of silicon carbide substrates. This process enables the fabrication of embedded structures, which are the building blocks for optical and integrated optical devices. Laser metallization, a phase transformation process without the addition of metal, and laser doping, both n-type and p-type, are used to modify the optical reflectivity and transmission of select surface and embedded regions of silicon carbide (SiC) wafers. The reflectivities of these laser synthesized structures are increased by 40% compared to the parent wafer. Laser doping increases the absorption coefficient by three orders of magnitude compared to the parent wafer; this is a factor of 16 greater than that observed for conventionally doped (e.g., ion implantation) wafers. Optical properties were measured at 1064 nm laser wavelengths using intensities (～25W/cm~2), which are much less than used in laser-synthesis (～90MW/cm~2).
机译：激光直接写入工艺用于选择性地改变碳化硅衬底的表面和内部光学特性。此过程使嵌入式结构的制造成为可能，而嵌入式结构是光学和集成光学设备的基础。激光金属化（一种不添加金属的相变工艺）和激光掺杂（n型和p型）用于修改光反射率以及碳化硅（SiC）晶圆的选定表面和嵌入区域的透射率。与母晶圆相比，这些激光合成结构的反射率提高了40％。与母晶圆相比，激光掺杂将吸收系数提高了三个数量级。这比常规掺杂（例如，离子注入）晶片所观察到的结果大16倍。在1064 nm激光波长下使用强度（〜25W / cm〜2）测得的光学特性远小于激光合成所用的强度（〜90MW / cm〜2）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号