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首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >ZnO Spintronics and Nanowire Devices
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ZnO Spintronics and Nanowire Devices

机译：ZnO自旋电子学和纳米线器件

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ZnO is a very promising material for spintronics applications, with many groups reporting room temperature ferromagnetism in films doped with transition metals during growth or by ion implantation. In films doped with Mn during PLD, we find an inverse correlation between magnetization and electron density as controlled by Sn doping. The saturation magnetization and coercivity of the implanted single-phase films were both strong functions of the initial anneal temperature, suggesting that carrier concentration alone cannot account for the magnetic properties of ZnO:Mn and factors such as crystalline quality and residual defects play a role. Plausible mechanisms for the ferromagnetism include the bound magnetic polaron model or exchange is mediated by carriers in a spin-spilt impurity band derived from extended donor orbitals. We will also review progress in ZnO nanowires. The large surface area of nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them candidates for micro-lasers or memory arrays. Single ZnO nanowire depletion-mode metal-oxide semiconductor field effect transistors exhibit good saturation behavior, threshold voltage of ～-3V and a maximum transconductance of 0.3 mS/mm. Under UV illumination, the drain-source current increased by approximately a factor of 5 and the maximum transconductance was ～ 5 mS/mm. The channel mobility is estimated to be ～3 cm~2 /V.s, comparable to that for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ～25 in the dark and ～125 under UV illumination. Pt Schottky diodes exhibit excellent ideality factors of 1.1 at 25 ℃, very low reverse currents and a strong photoresponse, with only a minor component with long decay times thought to originate from surface states. In the temperature range from 25-150 ℃, the resistivity of nanorods treated in H_2 at 400 ℃ prior to measurement showed an activation energy of 0.089 eV and was insensitive to the ambient used . By contrast, the conductivity of nanorods not treated in H_2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors.
机译：ZnO是自旋电子学应用中非常有前途的材料，许多研究小组报告说，在生长或离子注入过程中，掺杂过渡金属的薄膜具有室温铁磁性。在PLD期间掺杂Mn的薄膜中，我们发现受Sn掺杂控制的磁化强度和电子密度之间呈反比关系。注入的单相膜的饱和磁化强度和矫顽力都是初始退火温度的强函数，这表明单独的载流子浓度不能解释ZnO：Mn的磁性，而诸如晶体质量和残余缺陷等因素起着作用。铁磁性的可能机制包括结合的磁极化子模型，或交换是由衍生自扩展供体轨道的自旋分裂杂质带中的载流子介导的。我们还将回顾ZnO纳米线的进展。纳米棒的大表面积使其对气体和化学传感具有吸引力，控制其成核位点的能力使其成为微激光器或存储阵列的候选者。单个ZnO纳米线耗尽型金属氧化物半导体场效应晶体管表现出良好的饱和特性，阈值电压约为-3V，最大跨导为0.3 mS / mm。在紫外线照射下，漏源电流增加了大约5倍，最大跨导约为5 mS / mm。沟道迁移率估计为〜3 cm〜2 / V.s，与薄膜ZnO增强型MOSFET的沟道迁移率相当，在黑暗中的开/关比为〜25，在紫外线照射下的开/关比为〜125。 Pt肖特基二极管在25℃时具有1.1的理想理想因子，极低的反向电流和很强的光响应性，只有很少的成分具有较长的衰变时间，被认为源自表面态。在25-150℃的温度范围内，测量前在400℃的H_2中处理的纳米棒的电阻率显示为0.089 eV的活化能，并且对所使用的环境不敏感。相比之下，即使在室温下，未经H_2处理的纳米棒的电导率也对测量环境中的痕量气体敏感，这证明了它们作为气体传感器的潜力。

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