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首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >AUGER AND LEED STUDIES OF THE SURFACE CHEMISTRY OF INP(100) WAFERS AFTER WET ETCHING, ION BOMBARDMENT, AND ELECTROCHEMICAL ETCHING
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AUGER AND LEED STUDIES OF THE SURFACE CHEMISTRY OF INP(100) WAFERS AFTER WET ETCHING, ION BOMBARDMENT, AND ELECTROCHEMICAL ETCHING

机译：湿法刻蚀，离子轰击和电化学刻蚀后INP（100）晶片表面化学的Auer和LEED研究

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The objective of this investigation was to develop a procedure for cleaning InP, to investigate the electrochemistry of the InP(100) surface, and to look at the possibility of using electrochemical digital etching on InP. Wet etches included pretreatment with Br_2/CH_3OH solution and a HF solution. Both appeared to remove C and O, but traces were still observed with Auger electron spectroscopy. UV ozone cleaning on InP gave similar results, but left the surface with a phosphate layer. Ion bombardment and annealing of InP resulted in a clean, well-ordered surface with a (2x4) reconstruction. However, studies of the voltammetry of this surface suggested the presence of some dispersed clusters of metallic In. This In was easily oxidized electrochemically at -0.6 V. Solutions with various pHs were used to study the electrochemistry of the 'clean' InP surface. Acid electrolytes, 10 mM HCl and 10 mM H_2SO_4, displayed the oxidation of the metallic In clusters, which diffused away, leaving a 'stable' surface displaying a simple (1X1) LEED pattern. Oxidation of the InP surface commenced above 0.2 V, and in higher pH solutions, resulted in the formation of a passive layer, including phosphate. At pH 9, reduction into the hydrogen evolution region, also resulted in the dissolution of some P, probably as a phosphine species. This was evidenced by the appearance of small amounts of metallic In. This then suggests that digital etching of InP is possible. That is, an atomic layer of P can first be reduced in a basic solution, and the resulting metallic In, can be oxidatively removed in an acidic solution.
机译：这项研究的目的是开发一种清洁InP的程序，以研究InP（100）表面的电化学，并研究在InP上使用电化学数字蚀刻的可能性。湿法刻蚀包括用Br_2 / CH_3OH溶液和HF溶液进行预处理。两者似乎都去除了C和O，但仍通过俄歇电子能谱观察到痕迹。在InP上进行UV臭氧清洗也得到了类似的结果，但是在表面留下了一层磷酸盐层。离子轰击和InP退火可产生干净，井井有条的表面，并进行（2x4）重建。但是，对该表面伏安法的研究表明存在一些分散的金属In簇。该In在-0.6 V时很容易被电化学氧化。使用具有各种pH值的溶液来研究'干净'InP表面的电化学。酸性电解质10 mM HCl和10 mM H_2SO_4表现出金属In团簇的氧化，这些团簇扩散开，留下一个“稳定”表面，显示简单的（1X1）LEED图案。 InP表面的氧化开始于0.2 V以上，并且在较高pH的溶液中，导致形成了包括磷酸盐在内的钝化层。在pH为9时，还原成氢放出区域，也会导致某些P的溶解，可能是磷化氢。少量金属In的出现证明了这一点。然后，这表明可以对InP进行数字蚀刻。即，可以首先在碱性溶液中还原P的原子层，然后可以在酸性溶液中氧化除去所得的金属In。

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