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首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >SYNTHESIS OF ONE-DIMENSIONAL GAN NANOSTRUCTURES AND GAN/CNT/SI/SILICATE NANOCABLES BY METALORGANIC CHEMICAL VAPOR DEPOSITION
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SYNTHESIS OF ONE-DIMENSIONAL GAN NANOSTRUCTURES AND GAN/CNT/SI/SILICATE NANOCABLES BY METALORGANIC CHEMICAL VAPOR DEPOSITION

机译：金属有机化学气相沉积法合成一维GAN纳米结构和GAN / CNT / SI /硅酸盐纳米材料

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摘要

One-dimensional GaN nanostructures and GaN/CNT/Si/silicate nanocables have been synthesized by metalorganic chemical vapor deposition. Nanotubes were formed at 600℃, whereas nanowires were grown at 800-1000℃ manly through vapor-liquid-solid mechanism. At 1100℃, stacked hexagonal pyramid structure was grown. The growth of the complex nanostructure was inferred to be governed by both surface diffusion and bulk diffusion. The nanotubes were characterized to be of single crystalline wurtzite phase and were grown along the [110]GaN direction. It is proposed that the formation of Ga-Au eutectic phase, Ga supersaturation and precipitation, as well as a limited nitridation efficiency at the low temperature led to the peculiar nanostructures. For the synthesis of GaN/CNT/Si/silicate nanocables, carbon nanotubes were used as the templates. The nanostructures include a core of GaN nanodots and nanorods inside carbon nanotubes sheathed by amorphous Si and silicate nanotubes. The method can efficiently control the diameter of GaN nanostructure in molecular-scale (2-10 nm).
机译：一维GaN纳米结构和GaN / CNT / Si /硅酸盐纳米电缆已经通过金属有机化学气相沉积法合成。纳米管在600℃时形成，而纳米线在80-1000℃时通过气液固机理生长。在1100℃下，生长出堆叠的六棱锥结构。推测复杂纳米结构的生长受表面扩散和整体扩散的支配。纳米管被表征为单晶纤锌矿相并沿[110] GaN方向生长。提出Ga-Au共晶相的形成，Ga的过饱和和沉淀，以及在低温下有限的氮化效率导致了独特的纳米结构。为了合成GaN / CNT / Si /硅酸盐纳米电缆，碳纳米管被用作模板。纳米结构在由非晶硅和硅酸盐纳米管包覆的碳纳米管内部包括GaN纳米点和纳米棒的核心。该方法可以在分子规模（2-10nm）中有效地控制GaN纳米结构的直径。

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