ELECTROCHEMISTRY AND ETCHING OF WIDE BANDGAP CHEMICALLY RESISTANT SEMICONDUCTORS

机译：宽带隙化学耐性半导体的电化学和蚀刻

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The photoanodic etching of the wide bandgap n-type semiconductors GaN and SiC in alkaline solution is described. Various surface morphologies can be obtained by etching. The electrochemistry of these systems is considered, in particular the factors that determine the surface morphology. A novel two-step approach to the etching of the Ga-polar face of GaN is presented.

机译：描述了在碱性溶液中对宽带隙n型半导体GaN和SiC的光阳极蚀刻。可以通过蚀刻获得各种表面形态。考虑这些系统的电化学，特别是决定表面形态的因素。提出了一种新颖的两步法刻蚀GaN的Ga极性面。

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《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》|2005年|P.138-146|共9页
会议地点 Quebec City(CA)
作者
J.J. Kelly; L. Macht; D.H. van Dorp; M.R. Kooijman; J.L. Weyher;
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Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
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ELECTROCHEMISTRY AND ETCHING OF WIDE BANDGAP CHEMICALLY RESISTANT SEMICONDUCTORS

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