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首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >PASSIVATION OF Ⅲ/Ⅴ-BASED COMPOUND SEMICONDUCTOR DEVICES USING HIGH-DENSITY PLASMA DEPOSITED SILICON NITRIDE FILMS
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PASSIVATION OF Ⅲ/Ⅴ-BASED COMPOUND SEMICONDUCTOR DEVICES USING HIGH-DENSITY PLASMA DEPOSITED SILICON NITRIDE FILMS

机译：高密度等离子体沉积硅氮化物膜对基于Ⅲ/Ⅴ的复合半导体器件的钝化

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We report on the passivation of three kinds of Ⅲ/Ⅴ-based compound semiconductor devices using high-density plasma deposited silicon nitride (SiN) films. The devices are GaAs/AlGaAs quantum-well infrared photodetectors (QWIP), InGaAs/AlGaAs high-power lasers, and GaN-based high-electron mobility transistors (HEMT). It has been found that the deposition of SiN films has to be optimized for the specific application. For QWIP we have developed a room temperature SiN film exhibiting low mechanical stress (compressive 100 MPa), good adhesion to metal, and fairly high coefficient of thermal expansion. The film is highly conformal and has excellent step coverage. Using this film reliable QWIP-based IR (8-12 □m) cameras in collaboration with AEG Infrarot-Module (AIM) GmbH, Heilbronn, Germany have been realized. The cameras are in operation ever since 5 years. For InGaAs/AlGaAs high-power lasers, we have developed a low-temperature (90℃) SiN film with low intrinsic stress (compressive 170 MPa) and a negligible hysteresis in stress upon thermal cycling. The reliability test of broad area laser diodes emitting at 880 nm exhibited the lifetime of more than 10,000 h ( based on a criterion of 20 % decrease in the initial output power of the laser) at 50℃ after the emitting facet was coated with this SiN film. For GaN-based power devices low-temperature (240℃) different SiN films exhibiting high breakdown electric field strength ( > 7.0 MV/cm) for metal-insulator-metal (MIM) capacitors on a Si substrate and a negligible hysteresis in stress upon thermal cycling have been developed. The DC-lifetime test of GaN/AlGaN HEMT device with gate length 0.3 □m showed the lifetime of 450 h after passivation with a tensile SiN film. The cw output power density of 5.2 W/mm at 10 GHz and 35 V drain bias has been measured for a device periphery of 8x125 □m.
机译：我们报告了使用高密度等离子体沉积氮化硅（SiN）膜对三种基于Ⅲ/Ⅴ的化合物半导体器件的钝化。这些器件是GaAs / AlGaAs量子阱红外光电探测器（QWIP），InGaAs / AlGaAs高功率激光器和GaN基高电子迁移率晶体管（HEMT）。已经发现，必须针对特定应用优化SiN膜的沉积。对于QWIP，我们开发了一种室温SiN膜，该膜表现出较低的机械应力（压缩100 MPa），对金属的良好粘合性以及相当高的热膨胀系数。该膜是高度保形的并且具有优异的台阶覆盖率。通过与德国海尔布隆的AEG Infrarot-Module（AIM）GmbH合作，使用这种胶片可实现基于QWIP的可靠IR（8-12□m）摄像机。这些摄像机自5年以来一直在使用。对于InGaAs / AlGaAs大功率激光器，我们开发了一种低温（90℃）SiN膜，该膜具有较低的固有应力（压缩压170 MPa），并且在热循环时应力的滞后作用可忽略不计。在用SiN涂覆发射面后，在50℃下发射880 nm的广域激光二极管的可靠性测试显示寿命超过10,000 h（基于激光器的初始输出功率降低20％的标准）。电影。对于基于GaN的功率器件，低温（240℃）的不同SiN膜对Si衬底上的金属-绝缘体-金属（MIM）电容器表现出高击穿电场强度（> 7.0 MV / cm），并且在应力作用下的滞后作用可忽略不计已经开发出热循环。栅长为0.3□m的GaN / AlGaN HEMT器件的DC寿命测试表明，用拉伸SiN膜钝化后的寿命为450 h。对于8x125□m的器件外围，在10 GHz和35 V漏极偏置下的cw输出功率密度为5.2 W / mm。

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