CORRELATION BETWEEN PHOTOLUMINESCENCE N-INP AND MORPHOLOGY OF CU ELECTRODEPOSITION

机译：铜电沉积光致发光N-INP与形貌的相关性

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This paper features electrodeposition of Cu on n-InP, studied by in situ photoluminescence (PL), atomic force microscopy (AFM) and ex situ X-ray photoelectron spectroscopy (XPS). Two regimes of potentiostatic deposition are observed with PL and AFM that are correlated with marked differences on XPS surveys. These two behaviours are correlated to different coverages of initial nuclei densities.

机译：本文通过原位光致发光（PL），原子力显微镜（AFM）和非原位X射线光电子能谱（XPS）研究了Cu在n-InP上的电沉积。 PL和AFM观察到两种恒电位沉积方式，这与XPS调查中的明显差异相关。这两种行为与初始核密度的不同覆盖范围相关。

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《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》|2005年|P.87-94|共8页
会议地点 Quebec City(CA)
作者
Pierre Iran-Van; Isabelle Gerard; Deborah Segall; Charlotte Saint-Lu; A. Etcheberry;
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Institut de Reactivite, Electrochimie et Microporosite, Batiment Lavoisier-Universite de Versailles St-Quentin-en-Yvelines, 45, avenue des Etats-Unis 78035 VERSAILLES, France;

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正文语种 eng
中图分类半导体技术;
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CORRELATION BETWEEN PHOTOLUMINESCENCE N-INP AND MORPHOLOGY OF CU ELECTRODEPOSITION

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