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首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >INACTIVATION OF THE JUNCTION SURFACES IN SIGE/SI DIODES
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INACTIVATION OF THE JUNCTION SURFACES IN SIGE/SI DIODES

机译：SIGE / SI二极管中接合表面的失活

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摘要

We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μ m by Ⅰ-Ⅴ measurements and X-ray photoelectron spectroscopy. The Ⅰ-Ⅴ measurements indicated that the HF-acid dipping followed by the H_2SO_4 and H_2O_2 treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm~2. In this treatment, the surface Ge is soluble in the H_2SO_4 and H_2O_2 treatment and only SiO_2 remains on the surface. On the other hand, low temperature oxidation with UV ozone or O_2 ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO_2 causes the leakage current in the junction surface.
机译：我们通过Ⅰ-Ⅴ测量和X射线光电子能谱研究了iGe层厚度为20μm的SiGe / Si / Si pin二极管的最佳结表面处理。 Ⅰ-Ⅴ测量结果表明，在100μA/ cm〜2的漏电流下，先进行HF酸浸渍，再进行H_2SO_4和H_2O_2处理，击穿电压最好超过300V。在该处理中，表面Ge可溶于H_2SO_4和H_2O_2处理，并且仅SiO_2残留在表面上。另一方面，在紫外线臭氧或O_2环境下进行低温氧化会导致低于200V的较低击穿电压，其中在表面上会出现Si和Ge氧化物。 XPS研究表明，表面GeO_2会在结表面引起泄漏电流。

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