RPCVD SILICON NITRIDE PASSIVATION OF INGAASP WITH TEMPERATURE RAMPING DURING DEPOSITION

机译：沉积过程中温度升高将RPCVD硅氮化物钝化

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In this paper, we have demonstrated the temperature ramping technique during RPCVD SiN_x deposition for InP/InGaAsP structure. Devices with InP-based material are degraded by PECVD SiN_x passivation, mainly because InP and InGaAsP suffer the preferential etching of phosphorus by NH_3 plasma at the conventional deposition temperature. By the measurement of photoluminescence for SiN_x-passivated InGaAsP and the reverse current of InGaAsP/InP p-n junction diodes, this technique of RPCVD SiN_x passivation have been confirmed as a useful passivation method for InP-based devices.

机译：在本文中，我们已经证明了InP / InGaAsP结构在RPCVD SiN_x沉积过程中的温度升高技术。具有InP基材料的器件会因PECVD SiN_x钝化而退化，这主要是因为InP和InGaAsP在常规沉积温度下会受到NH_3等离子体对磷的优先刻蚀。通过测量SiN_x钝化的InGaAsP的光致发光和InGaAsP / InP p-n结二极管的反向电流，已证实这种RPCVD SiN_x钝化技术是基于InP的器件的一种有用的钝化方法。

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《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》|2005年|P.361-366|共6页
会议地点 Quebec City(CA)
作者
Jaeho Kim; Jung-Ho Cha; Man-Lyun Ha; Choul-Young Kim; Young-Se Kwon;
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Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology Daejeon 305-701, Republic of Korea;

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正文语种 eng
中图分类半导体技术;
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1. Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes [J] . JAEHO KIM, JUNG-HO CHA, YOUNG-SE KWON Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第11期

机译：InP / InGaAsP发光二极管上的氮化硅二级温度钝化
2. High temperature and low pressure chemical vapor deposition of silicon nitride on AIGaN: Band offsets and passivation studies [J] . Pramod Reddy, Shun Washiyama, Felix Kaess, Journal of Applied Physics . 2016,第14期

机译：AIGaN上氮化硅的高温低压化学汽相沉积：能带偏移和钝化研究
3. Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride [J] . Johannes Seiffe, Luca Gautero, Marc Hofmann, Journal of Applied Physics . 2011,第3期

机译：通过等离子体增强化学气相沉积双层富硅氧氮化硅和氮化硅的表面钝化结晶硅
4. RPCVD SILICON NITRIDE PASSIVATION OF INGAASP WITH TEMPERATURE RAMPING DURING DEPOSITION [C] . Jaeho Kim, Jung-Ho Cha, Man-Lyun Ha, Electrochemical Society Meeting . 2005

机译：RPCVD沉积温度斜坡夹尖钝化钝化钝化
5. The low-temperature thermal chemical vapor deposition and catalyzed chemical vapor deposition of aluminum nitride and silicon nitride [D] . Dupuie, Jeffrey L. 1991

机译：氮化铝和氮化硅的低温热化学气相沉积和催化化学气相沉积
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power [O] . A. Iqbal, G. Walker, L. Hold, 2019

机译：在硅（100）衬底上立方碳化碳铝铝膜的溅射：基板温度和沉积功率的影响
8. Investigation of Silicon Surface Passivation by Silicon Nitride Film Deposition: Final Report, September 1, 1983-August 31, 1986 [R] . Olsen, L. C. 1986

机译：通过氮化硅薄膜沉积研究硅表面钝化：最终报告，1983年9月1日 - 1986年8月31日

RPCVD SILICON NITRIDE PASSIVATION OF INGAASP WITH TEMPERATURE RAMPING DURING DEPOSITION

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