ON THE EFFECT OF SURFACE PRETREATMENT UPON THE ELECTRONIC STRUCTURE OF N-GAN SURFACES

机译：表面预处理对N-GAN表面电子结构的影响

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Charge transfer reactions and recombination processes were studied at the n-GaN/electrolyte interface at electrodes which were either "new"(i.e. not subjected to any pretreatment besides a 6 M HCl dip) or photoanodically etched in 1 M H_2SO_4 solutions prior to the experiments. Photocurrent multiplication studies show that that etching leads to an increase of the photocurrent multiplication factor at n-GaN in formic acid containing solutions. From impedance measurements it follows that the surface treatment provokes an irreversible shift of the flat-band potential and a curving of the Mott-Schottky plots. Electroluminescence spectra recorded in aqueous solutions containing persulfate ions at etched electrodes show a different spectral distribution as compared to spectra, recorded at new electrodes. These results can be explained by an effect of photoanodic etching upon the nature and/or concentration of intrinsic surface states at or in the vicinity of the n-GaN surface.

机译：在实验之前，在电极的n-GaN /电解质界面处研究了电荷转移反应和复合过程，这些电极是“新的”（即除了6 M HCl浸液之外未经任何预处理）或在1 M H_2SO_4溶液中进行光阳极蚀刻。光电流倍增研究表明，蚀刻会导致含甲酸溶液中n-GaN处的光电流倍增因子增加。从阻抗测量结果可以看出，表面处理引起了平带电势的不可逆移动以及莫特-肖特基曲线的弯曲。与在新电极处记录的光谱相比，在蚀刻电极处包含过硫酸根离子的水溶液中记录的电致发光光谱显示出不同的光谱分布。这些结果可以通过光阳极蚀刻对n-GaN表面处或附近的本征表面状态的性质和/或浓度的影响来解释。

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《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》|2005年|P.3-15|共13页
会议地点 Quebec City(CA)
作者
K. Strubbe; W.P. Gomes; I.M. Huygens;
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Physical Chemistry Laboratory, Ghent University Krijgslaan 281 (S12), B-9000 Gent, Belgium;

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正文语种 eng
中图分类半导体技术;
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ON THE EFFECT OF SURFACE PRETREATMENT UPON THE ELECTRONIC STRUCTURE OF N-GAN SURFACES

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