EFFECTS OF INTERFACIAL NATIVE OXIDE ON ELECTRICAL PROPERTIES OF BONDED GAAS WAFERS

机译：界面天然氧化物对键合气体晶片电学性能的影响

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The electrical characteristics and microstructures of p-type and n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 ?. When temperatures increased above 400 ℃, the oxide bonded area declined and finally disappeared. For p-type bonded GaAs, electrical resistance decreased with bonding temperature. As for n-type (100) GaAs, electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 ℃ due to the thermal conversion and in-diffusion of interfacial native oxide.

机译：系统地研究了p型和n型（100）GaAs键合界面的电学特性和微观结构。实验结果表明，GaAs并不直接与自身结合，而是通过400Ω的非晶氧化物层结合。当温度升高到400℃以上时，氧化物结合面积下降，最终消失。对于p型键合GaAs，电阻随键合温度降低。对于n型（100）GaAs，电阻随键合温度而降低。但是，由于热转化和界面天然氧化物的扩散，电阻在温度超过850℃时增加。

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《Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C》|2005年|P.374-382|共9页
会议地点 Quebec City(CA)
作者
Po Chun Liu; Cheng Lun Lu; Wei Chih Peng; YewChung Sermon Wu; Hao Ouyang;
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Department of Materials Science and Engineering, National, Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.;

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正文语种 eng
中图分类半导体技术;
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EFFECTS OF INTERFACIAL NATIVE OXIDE ON ELECTRICAL PROPERTIES OF BONDED GAAS WAFERS

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