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首页> 外文会议>Proceedings vol.2005-04; Electrochemical Society(ECS) Meeting and 42nd State-of-the-Art-Program on Compound Semiconductors(SOTAPOCS XLII) and the International Symposium on Processes at the Compound-Semiconductor/Solution Interface; 20050515-20; Quebec C >Preparation and characterization of ZnO film on Si(111) substrate with SiC buffer layer deposited by MOCVD
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Preparation and characterization of ZnO film on Si(111) substrate with SiC buffer layer deposited by MOCVD

机译：MOCVD沉积SiC缓冲层的Si（111）衬底上ZnO薄膜的制备与表征

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Recently, ZnO has attracted great attention due to its ultraviolet luminescence. In order to fabricate high-efficiency light emitting devices, good quality single crystal ZnO films are required. Since the ZnO single crystal wafers are too expensive, most ZnO films were prepared by hetero-epitaxy. Si substrate is a powerful candidate for the ZnO hetero-epitaxy due to not only its low cost, but also the additional advantages in photoelectric integration. However, it is difficult to get high quality ZnO single crystal films on Si substrates because of the large lattice mismatch between ZnO and Si. In these experiments, a special low-pressure metal-organic chemical vapor deposition system has been designed, which has two reactors connected each other by a gate valve. Using this equipment, highly c-axis oriented ZnO epitaxial films were deposited on Si (111) substrate by though a SiC buffer layer in order to reduce the lattice mismatch between ZnO and Si. The SiC buffer layers and the ZnO films were prepared in different reactor of the special MOCVD system. It can prevent the pollution between SiC and ZnO during growth. The measurement of Fourier-transform infrared absorption spectra (FTIR) and double-crystal X-ray diffraction indicate that the SiC film is 3C phase and the rocking curve FWHM of SiC (111) is 0.6°. For the ZnO grown on Si(111) substrate with a 3C-SiC buffer layer, he rocking curve FWHM of ZnO(002) is 1.19°, much lower than that of the ZnO film directly grown on Si substrate. These experimental results prove that the SiC buffer layer is useful for modulating the lattice mismatch between ZnO and Si. Using a lattice-matched mode between Si, SiC and ZnO supposed here, the influnce of SiC buffer layer can be explained very well. The photoelectric properties of ZnO/SiC/Si materials were also greatly improved by SiC buffer layer. Much stronger ultraviolet emission has been observed in the photoluminescence spectra at room temperature. Moreover, the photovoltaic effect has also been enhanced, and it exhibited a novel stepped special response.
机译：近年来，ZnO由于其紫外线发光而引起了极大的关注。为了制造高效的发光器件，需要高质量的单晶ZnO膜。由于ZnO单晶晶片太贵，大多数ZnO薄膜是通过异质外延制备的。硅衬底不仅成本低廉，而且在光电集成方面具有其他优势，因此是ZnO异质外延的有力选择。但是，由于ZnO和Si之间的晶格失配较大，因此难以在Si衬底上获得高质量的ZnO单晶膜。在这些实验中，设计了一种特殊的低压金属有机化学气相沉积系统，该系统具有两个通过闸阀相互连接的反应器。使用该设备，通过SiC缓冲层将高c轴取向的ZnO外延膜沉积在Si（111）衬底上，以减少ZnO和Si之间的晶格失配。在特殊MOCVD系统的不同反应器中制备了SiC缓冲层和ZnO薄膜。它可以防止生长过程中SiC和ZnO之间的污染。傅立叶变换红外吸收光谱（FTIR）和双晶X射线衍射的测量表明SiC膜为3C相，SiC（111）的摇摆曲线FWHM为0.6°。对于在具有3C-SiC缓冲层的Si（111）衬底上生长的ZnO，ZnO（002）的摇摆曲线FWHM为1.19°，远低于直接在Si衬底上生长的ZnO膜的摇摆曲线。这些实验结果证明，SiC缓冲层可用于调节ZnO和Si之间的晶格失配。使用此处假设的Si，SiC和ZnO之间的晶格匹配模式，可以很好地解释SiC缓冲层的影响。 SiC缓冲层也大大提高了ZnO / SiC / Si材料的光电性能。在室温下的光致发光光谱中观察到了更强的紫外线发射。此外，光伏效应也得到增强，并且表现出新颖的阶梯式特殊响应。

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