ANALYSIS OF THE LINEAR KINK EFFECT IN PARTIALLY DEPLETED SOI NMOSFET'S

机译：部分耗尽型SOI NMOSFET的线性扭结效应分析

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In this work, the occurrence of the linear kink effect (LKE) in PD SOI nMOSFETs is investigated experimentally and by two-dimensional simulations. The experimental dependence of the LKE on the drain voltage and the channel length is reported, showing a reduction of the second peak in the transconductance when the transistor channel length decrease. By two-dimensional numerical simulations, the impact of various parameters on this second peak has been studied, namely, the gate current level, the carrier lifetime, the increase of the body potential and the threshold voltage variation.

机译：在这项工作中，通过二维仿真实验研究了PD SOI nMOSFET中线性扭结效应（LKE）的发生。报告了LKE对漏极电压和沟道长度的实验依赖性，表明当晶体管沟道长度减小时，跨导的第二个峰值减小。通过二维数值模拟，研究了各种参数对该第二峰的影响，即栅极电流水平，载流子寿命，体电位的增加和阈值电压变化。

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《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.512-519|共8页
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P. G. Agopian; J. A. Martino; E. Simoen; C. Claeys;
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Laboratorio de Sistemas Integraveis Escola Politecnica da Universidade de Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n° 158 CEP 05508-900 - Sao Paulo - Brazil;

Centro Universitario da FEI, Sao Bernardo do Campo - Brazil;

IMEC, Kapeldreef 75, B-3001 Le;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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专利

1. 130-nm Partially Depleted SOI MOSFET Nonlinear Model Including the Kink Effect for Linearity Properties Investigation [J] . Alexandra Siligaris, Gilles Dambrine, Dominique Schreurs, IEEE Transactions on Electron Devices . 2005,第12期

机译：130nm部分耗尽的SOI MOSFET非线性模型，包括扭结效应，用于线性特性研究
2. Linear-Kink-Noise Suppression in Partially Depleted SOI Using the Twin-Gate MOSFET Configuration [J] . E. Simoen, C. Claeys, N. Lukyanchikova, IEEE Electron Device Letters . 2005,第7期

机译：使用双栅极MOSFET配置的部分耗尽SOI中的线性扭结噪声抑制
3. Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs [J] . Marcelo Antonio Pavanello, Joao Antonio Martino, Eddy Simoen, Solid-State Electronics . 2007,第9期

机译：单轴和双轴应变对完全耗尽SOI nMOSFET线性度的影响分析
4. ANALYSIS OF THE LINEAR KINK EFFECT IN PARTIALLY DEPLETED SOI NMOSFET'S [C] . P. G. Agopian, J. A. Martino, E. Simoen, International Symposium on Microelectronics Technology and Devices . 2005

机译：部分耗尽SOI NMOSFET的线性扭结效应分析
5. Implementation of a fully depleted Δ-channel SOI NMOSFET [D] . Jiao, Zhixian 2000

机译：完全耗尽的Δ沟道SOI NMOSFET的实现
6. Integrative Analysis of Gene-Environment Interactions under a Multi-response Partially Linear Varying Coefficient Model [O] . Cen Wu, Yuehua Cui, Shuangge Ma -1

机译：多响应部分线性变异系数模型下基因与环境相互作用的综合分析
7. Sensitivity analysis of nanowire biosensor in the partially depleted and fully depleted mode of subthreshold region [O] . M.B. Majumder, M.Z. Alvi, M.R. Islam, 2016

机译：纳米线生物传感器在亚阈值区域的部分耗尽和完全耗尽模式下的灵敏度分析

ANALYSIS OF THE LINEAR KINK EFFECT IN PARTIALLY DEPLETED SOI NMOSFET'S

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