INFLUENCE OF THE GATE OXIDE TUNNELING EFFECT ON THE EXTRACTION OF THE SILICON FILM AND FRONT OXIDE THICKNESS IN SOI nMOSFET

机译：栅隧穿效应对SOI nMOSFET中硅膜和前氧化膜厚度的提取的影响

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This work analyzes the influence of the gate oxide tunneling current on the extraction of the silicon film and front oxide thickness on deep submicrometer fully depleted SOI nMOSFET devices. Numerical bidimensional simulations to support the analysis and experimental measurements were done using 0.13 μm SOI CMOS technology.

机译：这项工作分析了深亚微米完全耗尽SOI nMOSFET器件上栅极氧化物隧穿电流对硅膜提取和正面氧化物厚度的影响。使用0.13μmSOI CMOS技术完成了支持分析和实验测量的二维数值模拟。

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《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.529-537|共9页
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作者
A. G. PAIOLA; A. S. NICOLETT; J. A. MARTINO;
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Laboratorio de Sistemas Integraveis - Universidade de Sao Paulo, Brazil;

Faculdade de Tecnologia de Sao Paulo - FATEC/CEETEPS, Brazil;

Pontificia Universidade Cato1ica de Sao Paulo - PUC/SP, Brazil;

Centro Universitaiio da FEI, S. B. do Campo, Brazil;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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1. A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs [J] . Jin He, Xing Zhang, Ru Huang Semiconductor science and technology . 2002,第5期

机译：SOI NMOSFET中分离前沟道热载流子应力引起的前，后栅极界面和氧化物陷阱的精制正向栅极二极管方法
2. The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures [J] . K. Bernert, rnC. Oestreich, rnJ. Bollmann, Applied Physics A: Materials Science & Processing . 2010,第1期

机译：底部氧化物厚度对SONOS结构中陷阱能分布的提取的影响
3. The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures [J] . K. Bernert, C. Oestreich, J. Bollmann, Applied Physics A: Materials Science & Processing . 2010,第1期

机译：底部氧化物厚度对SONOS结构中陷阱能分布的提取的影响
4. INFLUENCE OF THE GATE OXIDE TUNNELING EFFECT ON THE EXTRACTION OF THE SILICON FILM AND FRONT OXIDE THICKNESS IN SOI nMOSFET [C] . A. G. Paiola, A. S. Nicolett, J. A. Martino International Symposium on Microelectronics Technology and Devices . 2005

机译：栅氧化物隧穿效应对SOI NMOSFET中硅膜和前氧化物厚度提取的影响
5. Thermal stability of strontium iron oxide/silicon dioxide/silicon and strontium iron oxide/aluminum oxide thin film systems: Transmission electron microscopy study of interfacial structures of the thin film systems and conductometric sensing response of strontium iron oxide/aluminum oxide. [D] . Wang, Dashan. 2008

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INFLUENCE OF THE GATE OXIDE TUNNELING EFFECT ON THE EXTRACTION OF THE SILICON FILM AND FRONT OXIDE THICKNESS IN SOI nMOSFET

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