首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >A COMPARATIVE ANALYSIS OF ELECTRICAL CHARACTERISTICS OF SILICON MICRO-HEATERS FOR THERMAL TRANSDUCERS APPLICATIONS
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A COMPARATIVE ANALYSIS OF ELECTRICAL CHARACTERISTICS OF SILICON MICRO-HEATERS FOR THERMAL TRANSDUCERS APPLICATIONS

机译:硅微加热器在热敏换能器中的电气特性比较分析

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摘要

In this paper the electrical characteristics of two different micro-heater structures are presented and analyzed. These micro-heaters are CMOS process compatible monocrystalline and polycrystalline resistors and can be used as thermo-resistive sensors and thermal actuators in microsystems. Two different doping levels were used for polycrystalline micro-heaters fabrication. Resistance variation to electrical power density relationship, dopant concentration influence on the polysilicon micro-heater electric characteristics and a comparison between the heating efficiency for both structures are presented. These results can be extended for integrated circuit resistors as well.
机译:本文介绍并分析了两种不同的微型加热器结构的电特性。这些微加热器是与CMOS工艺兼容的单晶和多晶电阻器,可用作微系统中的热阻传感器和热执行器。两种不同的掺杂水平用于多晶微加热器的制造。提出了电阻变化与功率密度的关系,掺杂剂浓度对多晶硅微加热器电特性的影响以及两种结构的加热效率之间的比较。这些结果也可以扩展到集成电路电阻器。

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